Diodes PAM8803 - Manual (Page 4)

PAM8803
Document number: DSxxxxx Rev. 1 - 4
4 of 14
www.diodes.com
November 2012
© Diodes Incorporated
PAM8803
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, V
DD
= 5V, Gain = 18dB, R
L
= 8Ω, unless otherwise specified.)
Parameter Symbol Test Conditions Min Typ Max Units
Supply Voltage Range V
DD
2.2 5.5 V
Quiescent Current I
Q
No Load 7 15
mA R
L
= 8Ω 8
R
L
= 4Ω 8.5
Mute Current I
MUTE
V
MUTE
= 0V 2.5 4 mA
Shutdown Current I
SHDN
V
SHDN
= 0V 0.5 10 µA
SHDN Input High V
SH
1.2
V
SHDN Input Low V
SL
0.5
MUTE Input High V
MH
1.2
V
MUTE Input Low V
ML
0.5
Output Offset Voltage V
OS
No Load 120 300 mV
Drain-Source On-State Resistance R
DS(ON)
I
DS
= 0.5A
PMOSFET 0.3 0.40
Ω
N MOSFET 0.22 0.35
Output Power P
O
f =1kHz
R
L
= 8Ω, THD =1% 1.1 1.3
W
R
L
= 8Ω, THD = 10% 1.5 1.7
R
L
= 4Ω, THD = 1% 1.9 2.1
R
L
= 4Ω, THD = 10% 2.8 3.0
Total Harmonic Distortion Plus Noise THD+N
R
L
= 8Ω, P
O
= 0.5W 0.19
%
R
L
= 8Ω, P
O
= 1.0W 0.22
R
L
= 4Ω, P
O
= 1.0W 0.17
R
L
= 4Ω, P
O
= 2.0W 0.25
Power Supply Ripple Rejection PSRR No Input, f = 1kHz, V
PP
= 200mV 45 55 dB
Channel Separation CS P
O
= 1W, R
L
= 4Ω 60 80 dB
Oscillator Frequency f
OSC
170 210 250 kHz
Efficiency η
P
O
= 1.7W, f = 1kHz, R
L
= 8Ω 85 89 %
P
O
= 3.0W, f = 1kHz, R
L
= 4Ω 80 83 %
Signal Noise Ratio SNR
f = 22 to 22kHz
THD = 1% R
L
= 4Ω 85 dB
R
L
= 8Ω 87 dB
Under Voltage Lock-Out UVLO 1.95 V
Over Temperature Protection OTP 150 °C
Over Temperature Hysteresis OTH 60 °C