Pam8603a, Electrical characteristics – Diodes PAM8603A User Manual
Page 4

PAM8603A
Document number: DSxxxxx Rev. 1 - 2
4 of 16
www.diodes.com
November 2012
© Diodes Incorporated
PAM8603A
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, V
DD
= 5V, Gain = Maximum, R
L
= 8Ω, unless otherwise specified.)
Parameter Symbol Test
Conditions Min
Typ
Max
Units
Class D Stage
Supply Voltage Range
V
DD
2.5 5.5 V
Quiescent Current
I
Q
No Load
10
15
mA
Output Offset Voltage
V
OS
No Load
10
50
mV
Drain-Source On-State Resistance
R
DS(ON)
I
DS
= 0.5A
P
MOSFET 0.35
Ω
N
MOSFET 0.25
Output Power
P
O
THD+N = 10%, f = 1kHz,
Anti-saturation off
R
L
= 8Ω
1.55 1.70
W
R
L
= 4Ω
2.85 3.00
THD+N = 1%, f = 1kHz,
Anti-saturation off
R
L
= 8Ω
1.10 1.35
R
L
= 4Ω
2.3 2.5
f = 1kHz,
Anti-saturation on
R
L
= 8Ω
1.0
R
L
= 4Ω
2.0
Total Harmonic Distortion Plus Noise
THD+N
R
L
= 8Ω, P
O
= 0.85W, f = 1KHz
0.08
%
R
L
= 4Ω, P
O
= 1.75W, f = 1KHz
0.08
Power Supply Ripple Rejection
PSRR
Input AC-GND, f = 1KHz,
V
PP
= 200mV, Gain =2V/V
-70 dB
Channel Separation
CS
P
O
= 1W, f = 1KHz
-95 dB
Oscillator Frequency
f
OSC
200 250 300 kHz
Efficiency
η
P
O
= 1.7W, f =1 kHz, R
L
= 8Ω
85 89 %
P
O
= 3.0W, f =1 kHz, R
L
= 4Ω
80 83 %
Noise
V
N
Input AC-GND
A-Weighting
220
µV
No A-Weighting
350
Signal Noise Ratio
SNR
f = 20 – 20kHz, THD = 1%
85 dB
Earphone Stage
Quiescent Current
IQ
No Load
4.5
7.5
mA
Output Offset Voltage
V
OS
No Load
2.5 V
Output Power
P
O
THD+N = 1%, R
L
= 32Ω, f = 1KHz
60 mW
Total Harmonic Distortion Plus Noise
THD+N
R
L
= 32Ω, P
O
= 10mW, f = 1kHz
0.02 %
Power Supply Ripple Rejection
PSRR
Input AC-GND,
f = 1kHz, V
PP
= 200mV
-75 dB
Channel Separation
CS
P
O
= 1W
, f = 1kHz
-85 dB
Noise
V
N
Input
AC-GND
A-Weighting
40
µV
No A-Weighting
70
Signal Noise Ratio
SNR
f = 20 – 20kHz, V
O
= 1V
RMS
85 dB
Control Section
Under Voltage Lock-Out
UVLO
2
Mute Current
I
MUTE
V
MUTE
= 0V
1 3
mA
Shutdown Current
I
SHDN
V
SHDN
= 0V
1
µA
Ear/ Line Threshold Voltage
V
TH
0.65
SHDN Input High
V
SH
1.2
SHDN Input High
V
SL
0.5
MUTE Input High
V
MH
1.2
MUTE Input High
V
ML
0.5
Over Temperature Protection
OTP
140 °C
Over Temperature Hysteresis
OTH
30 °C