Diodes PAM8302A - Manual (Page 3)

PAM8302A
Document number: DSxxxxx Rev. 2 - 5
3 of 14
www.diodes.com
April 2013
© Diodes Incorporated
PAM8302A
A Product Line of
Diodes Incorporated
Recommended Operating Conditions
(@T
A
= +25°C, unless otherwise specified.)
Parameter Rating Unit
Suppy Voltage Range 2.0 to 5.5 V
Operation Temperature Range -40 to +85 °C
Junction Temperature Range -40 to +125 °C
Thermal Information
Parameter Package Symbol Max Unit
Thermal Resistance (Junction to Ambient)
SOP-8
θ
JA
115
°C/W
MSOP-8 180
DFN3x3-8 4739
DFN2x2-8 80
Electrical Characteristics
(@T
A
= +25°C, V
IN
= 3.6V, V
O
= 1.8V, C
IN
= 10µF, C
OUT
= 10µF, L = 4.7µH, unless otherwise specified.)
Parameter Symbol Test Conditions Min Typ Max Units
Supply Voltage Range V
DD
2.0 5.5 V
Quiescent Current I
Q
No Load 4 8 mA
Shutdown Current I
SHDN
V
SHDN
= 0V 1 µA
Output Power P
O
f = 1kHz, R
L
= 4Ω,
THD+N = 10%
V
DD
= 5V 2.25 2.50
W
V
DD
= 3.6V 1.10 1.25
f = 1kHz, R
L
= 4Ω,
THD+N = 1%
V
DD
= 5V 1.80 2.00
V
DD
= 3.6V 0.86 0.95
f = 1kHz, R
L
= 8Ω,
THD+N = 10%
V
DD
= 5V 1.35 1.50
V
DD
= 3.6V 0.72 0.80
f = 1kHz, R
L
= 8Ω,
THD+N = 1%
V
DD
= 5V 1.15 1.30
V
DD
= 3.6V 0.6 0.65
Peak Efficiency η f = 1kHz 85 88 %
Total Harmonic Distortion Plus Noise THD+N
R
L
= 8Ω, P
O
= 0.1W, f = 1kHz 0.30 0.35
%
R
L
= 8Ω, P
O
= 0.5W, f = 1kHz 0.45 0.50
R
L
= 4Ω, P
O
= 0.1W, f = 1kHz 0.35 0.40
R
L
= 4Ω, P
O
= 0.5W, f = 1kHz 0.40 0.45
Gain G
V
22.5 24.0 25.5 dB
Power Supply Ripple Rejection PSRR No Inputs, f = 1kHz, V
PP
= 200mV 45 50 dB
Dynamic Range DYN f = 20 to 20kHz 85 90 dB
Signal to Noise Ratio SNR f = 20 to 20kHz 75 80 dB
Noise V
N
No A-Weighting 180 300
µV
A-Weighting 120 200
Oscillator Frequency f
OSC
200 250 300 kHz
Drain-Source On-State Resistance R
DS(ON)
I
DS
= 100mA
P MOSFET 0.45 0.50
Ω
N MOSFET 0.20 0.25
SHDN Input High V
SH
1.2
V
SHDN Input Low V
SL
0.4
Over Temperature Protection OTP Junction Temperautre 120 135 °C
Over Temperature Hysterisis OTH 30 °C