Pam8007, Thermal information, Electrical characteristics – Diodes PAM8007 User Manual
Page 4
PAM8007
Document number: DSxxxxx Rev. 1 - 2
4 of 17
www.diodes.com
October 2012
© Diodes Incorporated
PAM8007
A Product Line of
Diodes Incorporated
Thermal Information
Parameter Package
Symbol
Max
Unit
Thermal Resistance (Junction to Ambient)
SSOP-24
θ
JA
90
°C/W
SOP-24 79.2
Thermal Resistance (Junction to Case)
SSOP-24
θ
JC
32
SOP-24 27
Electrical Characteristics
(@T
A
= +25°C, V
DD
= 5V, Gain = 24dB, R
L
= 8Ω, unless otherwise specified.)
Parameter Symbol Test
Conditions Min
Typ
Max
Units
Class D Stage
Supply Voltage Range
V
DD
2.5 5.5 V
Quiescent Current
I
Q
No Load
12
16
mA
Output Offset Voltage
V
OS
No Load
10
50
mV
Drain-Source On-State Resistance
R
DS(ON)
I
DS
= 0.5A
P
MOSFET
0.23
Ω
N
MOSFET
0.17
Output Power
P
O
THD+N = 10%
f = 1kHz
R
L
= 8Ω
1.55 1.75
W
R
L
= 4Ω
2.85 3.1
THD+N
R
L
= 8Ω, P
O
= 1W, f = 1KHz
0.12
%
Total Harmonic Distortion Plus Noise
R
L
= 4Ω, P
O
= 2W, f = 1KHz
0.15
Power Supply Ripple Rejection
PSRR
Input AC-GND, f = 1KHz, V
PP
= 200mV
63 dB
Channel Separation
CS
V
O
= 1V
RMS
, f = 1KHz
-88 dB
Oscillator Frequency
f
OSC
200 250 300 kHz
Efficiency
η
P
O
= 1.75W, f =1 kHz, R
L
= 8Ω
85 92 %
P
O
= 3.0W, f =1 kHz, R
L
= 4Ω
80 88 %
Noise
V
N
Input AC-GND
Gain = 12dB
A-Weighting
65
µV
No A-Weighting
90
Signal Noise Ratio
SNR
f = 20 – 20kHz, THD = 1%
84 dB
Earphone Stage
Output Power
P
O
THD+N = 1%, R
L
= 32Ω, f = 1kHz
69 mW
Total Harmonic Distortion Plus Noise
THD+N
R
L
= 32Ω, P
O
= 10mW, f = 1kHz
0.04 %
Power Supply Ripple Rejection
PSRR
Input AC-GND,
f = 1kHz, V
PP
= 200mV
73 dB
Channel Separation
CS
V
O
= 1V
RMS
, f = 1kHz
95 dB
Noise
V
N
Input
AC-GND
A-Weighting
19
µV
No A-Weighting
25
Signal Noise Ratio
SNR
f = 20 – 20kHz, THD = 1%
97 dB
Control Section
Mute Current
I
MUTE
V
MUTE
= 0V
8
12
mA
Shutdown Current
I
SHDN
V
SHDN
= 0V
20
µA
SHDN Input High
V
SH
1.5
V
SHDN Input Low
V
SL
0.4
MUTE Input High
V
MH
1.5
V
MUTE Input Low
V
ML
0.4
Line/Ear Input High
V
DH
2.5
V
Line/Ear Input Low
V
DL
0.4
Over Temperature Protection
OTP
150 °C
Over Temperature Hysteresis
OTH
30 °C