Diodes PAM8003 - Manual (Page 4)

PAM8003
Document number: DSxxxxx Rev. 1 - 1
4 of 12
www.diodes.com
November 2012
© Diodes Incorporated
PAM8003
A Product Line of
Diodes Incorporated
Electrical Characteristics (@T
A
= +25°C, V
DD
= 5V, Gain = 24dB, R
L
= 8Ω, unless otherwise specified.)
Symbol Parameter Test Conditions Min Typ Max Units
V
IN
Supply Power 2.5 5.5 V
P
O
Output Power
THD+N = 10%, f = 1kHz, R
L
= 4Ω V
DD
= 5.0V 2.5 W
THD+N = 1%, f = 1kHz, R
L
= 4Ω V
DD
= 5.0V 2.2 W
THD+N = 10%, f = 1kHz, R
L
= 8Ω V
DD
= 5.0V 1.65 W
THD+N = 1%, f = 1kHz, R
L
= 8Ω V
DD
= 5.0V 1.3 W
THD+N
Total Harmonic Distortion Plus
Noise
V
DD
= 5.0V, Po = 0.5W, R
L
= 8Ω
f = 1kHz
0.16
%
V
DD
= 3.6V, Po = 0.5W, R
L
= 8Ω 0.12
V
DD
= 5.0V, Po = 1W, R
L
= 4Ω
f = 1kHz
0.17
%
V
DD
= 3.6V, Po = 1W, R
L
= 4Ω 0.26
PSRR Power Supply Ripple Rejection
V
DD
= 5.0V, Inputs AC-Grounded with
C
IN
= 0.47μF, Gv = 6dB
f = 1kHz -70 dB
C
S
Crosstalk
V
DD
= 5V, Po = 0.5W, R
L
= 8Ω,
Gv = 20dB
f = 1kHz -93 dB
SNR Signal-to-Noise V
DD
= 5V, Gv = 6dB f = 1kHz 86 dB
V
N
Output Noise
V
DD
= 5V, Inputs AC-Grounded with
C
IN
= 0.47μF, G
V
= 6dB
A-weighting 33
µV
No A-weighting 50
η Efficiency
R
L
= 8Ω, THD = 10%
f = 1kHz
87
%
R
L
= 4Ω, THD = 10% 79
I
Q
Quiescent Current
V
DD
= 5.0V
No load
4.5 7.0
mA V
DD
= 3.6V 4.0 6.5
V
DD
= 3.0V 3.7 5.5
I
SD
Shutdown Current V
DD
= 2.5V to 5.5V 1 µA
R
DS(ON)
Static Drain-to-Source On-State
Resistor
I
DS
= 500mA,V
GS
= 5V
PMOS 0.41
mΩ
NMOS 0.27
fsw Switching Frequency V
DD
= 3V to 5V 210 kHz
V
OS
Output Offset Voltage V
IN
= 0V, V
DD
= 5V 10 mV
V
IH
Enable Input High Voltage V
DD
= 5.0V 1.5
V
V
IL
Enable Input Low Voltage V
DD
= 5.0V 0.4
OTP Over Temperature Protection
No Load, Junction Temperature V
DD
= 5V
150
°C
OTH Over Temperature Hysterisis 30