Diodes PAM2301 - Manual (Page 3)

PAM2301
Document number: DSxxxxx Rev. 2 - 7
3 of 13
www.diodes.com
January 2013
© Diodes Incorporated
PAM2301
A Product Line of
Diodes Incorporated
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may affect device reliability.
All voltages are with respect to ground.
Parameter Rating Unit
Input Voltage -0.3 to +6.0 V
EN, FB Pin Voltage -0.3 to V
IN
V
SW Pin Voltage -0.3 to (V
IN
+ 0.3) V
Junction Temperature +150 °C
Storage Temperature Range -65 to +150 °C
Soldering Temperature +300, 5sec °C
Recommended Operating Conditions
(@T
A
= +25°C, unless otherwise specified.)
Parameter Rating Unit
Supply Voltage 2.5 to 5.5 V
Operation Temperature Range -40 to +85
°C
Juntion Temperature Range -40 to +125
Thermal Information
Parameter Symbol Max Unit
Thermal Resistance (Junction to Case) θ
JC
130
°C/W
Thermal Resistance (Junction to Ambient) θ
JC
250
Internal Power Dissipation P
D
400 mW
Electrical Characteristics
(@T
A
= +25°C, V
IN
= 3.6V, V
O
= 1.8V, C
IN
= 10µF, L = 4.7µH unless otherwise specified.)
Parameter Symbol Test Conditions Min Typ Max Units
Input Voltage Range V
IN
2.5 5.5 V
Regulated Feedback Voltage V
FB
0.588 0.600 0.612 V
Reference Voltage Line Regulation ΔV
FB
0.3 %/V
Regulated Output Voltage Accuracy V
O
I
O
= 100mA -3 +3 %
Peak Inductor Current I
PK
V
IN
= 3V,V
FB
= 0.5V or V
O
= 90% 1.2 A
Output Voltage Line Regulation LNR V
IN
= 2.5V to 5V, I
O
= 10mA 0.2 0.5 %/V
Output Voltage Load Regulation LDR I
O
= 1mA to 800mA 0.5 1.5 %
Quiescent Current I
Q
No load 40 70 µA
Shutdown Current I
SD
V
EN
= 0V 0.1 1.0 µA
Oscillator Frequency f
OSC
V
O
= 100% 1.2 1.5 1.8 MHz
V
FB
= 0V or V
O
= 0V 500 kHz
Drain-Source On-State Resistance R
DS(ON)
I
DS
= 100mA
P MOSFET 0.30 0.45 Ω
N MOSFET 0.35 0.50 Ω
SW Leakage Current I
LSW
±0.01 1 µA
High Efficiency η 96 %
EN Threshold High V
EH
1.5 V
EN Threshold Low V
EL
0.3 V
EN Leakage Current I
EN
±0.01 µA
Over Temperature Protection OTP 150 °C
OTP Hysteresis OTH 30 °C