Diodes ZXTP05120HFF - Manual (Page 4)

ZXTP05120HFF
Issue 1 - May 2007 4 www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage BV
CBO
-140 -170 V I
C
= -100
␮A
Collector-emitter breakdown
voltage (base open) BV
CEO
-120 -140 V I
C
= -10mA (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Emitter-base breakdown
voltage BV
EBO
-10 -16 V I
E
= -100
␮A
Collector-base cut-off current I
CBO
<-1 -100 nA V
CB
= -120V
-10 ␮A V
CB
= -120V, T
amb
= 100°C
Collector-emitter cut-off
current I
CES
<-0.1 -10
␮A V
CB
= -120V
Emitter-base cut-off current I
EBO
<-1 -100 nA V
EB
= -8V
Collector-emitter saturation
voltage V
CE(sat)
-0.77 -0.9 V I
C
= 250mA, I
B
= 0.25mA (*)
-0.9 -1.1 V I
C
= -1A, I
B
= -1mA (*)
-1.3 -2.0 V I
C
= -2A, I
B
= -2mA (*)
Base-emitter saturation
voltage V
BE(sat)
-1.5 -1.7 V I
C
= -1A, I
B
= -1mA (*)
Base-emitter turn-on voltage V
BE(on)
-1.4 -1.7 V I
C
= -1A, V
CE
= -5V (*)
Static forward current
transfer ratio h
FE
3K 14k I
C
= -50mA, V
CE
= -5V (*)
3K 11k I
C
= -500mA, V
CE
= -5V (*)
3K 10k 30K I
C
= -1A, V
CE
= -5V (*)
2K 8k I
C
= -2A, V
CE
= -5V (*)
Transition frequency f
T
150 MHz I
C
= -100mA, V
CE
= -10V
f = 20MHz
Output capacitance C
ibo
67 90 pF V
EB
= -0.5V, f = 1MHz (*)
Output capacitance C
obo
22 40 pF V
CB
= -10V, f = 1MHz (*)
Delay time t
d
556 ns V
CC
= -10V.
I
C
= -0.5A,
I
B1
= I
B2
= -0.5mA.
Rise time t
r
212 ns
Storage time t
s
681 ns
Fall time t
f
304 ns