Diodes MMBTA64 User Manual
Mmbta63 / mmbta64, Features, Mechanical data
MMBTA63 / MMBTA64
PNP SURFACE MOUNT DARLINGTON TRANSISTOR
Features
•
Epitaxial Planar Die Construction
•
Complementary NPN Types Available
(MMBTA13 /MMBTA14)
•
Ideal for Low Power Amplification and Switching
•
High Current Gain
•
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
Mechanical Data
•
Case: SOT-23
•
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020D
•
Terminals: Solderable per MIL-STD-202, Method 208
•
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe). Terminal Connections: See Diagram
•
MMBTA63 Marking K2E, K3E See Page 3
•
MMBTA64 Marking K3E See Page 3
•
Ordering & Date Code Information: See Page 3
•
Weight: 0.008 grams (approximate)
A
E
J
L
TOP VIEW
M
DS30055 Rev. 8 - 2
1 of 3
www.diodes.com
MMBTA63 / MMBTA64
© Diodes Incorporated
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
α
0
°
8
°
All Dimensions in mm
B
C
C
B
E
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
-30
V
Collector-Emitter Voltage
V
CEO
-30
V
Emitter-Base Voltage
V
EBO
-10
V
Collector Current - Continuous (Note 1)
I
C
-500
mA
Power Dissipation (Note 1)
P
D
300
mW
Thermal Resistance, Junction to Ambient (Note 1)
R
θJA
417
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-30
⎯
V
I
C
= -100
μA V
BE
= 0V
Collector Cutoff Current
I
CBO
⎯
-100
nA
V
CB
= -30V, I
E
= 0
Emitter Cutoff Current
I
EBO
⎯
-100
nA
V
EB
= -10V, I
C
= 0
ON CHARACTERISTICS (Note 2)
DC Current Gain
MMBTA63
MMBTA64
MMBTA63
MMBTA64
h
FE
5,000
10,000
10,000
20,000
⎯
⎯
I
C
= -10mA, V
CE
= -5.0V
I
C
= -10mA, V
CE
= -5.0V
I
C
= -100mA, V
CE
= -5.0V
I
C
= -100mA, V
CE
= -5.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
-1.5
V
I
C
= -100mA, I
B
= -100
μA
Base-Emitter Saturation Voltage
V
BE(SAT)
⎯
-2.0
V
I
C
= -100mA, V
CE
= -5.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
125
⎯
MHz
V
CE
= -5.0V, I
C
= -10mA,
f = 100MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
H
G
D
D
K
E
B
C