Diodes MMBT6427 User Manual
Mmbt6427, Features, Mechanical data
MMBT6427
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
Features
•
Epitaxial Planar Die Construction
•
Ideal for Low Power Amplification and Switching
•
High Current Gain
•
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 1 and 4)
Mechanical Data
•
Case: SOT-23
•
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020D
•
Terminals: Solderable per MIL-STD-202, Method 208
•
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
•
Terminal Connections: See Diagram
•
Marking (See Page 3): K1D
•
Ordering & Date Code Information: See Page 3
•
Weight: 0.008 grams (approximate)
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
α
0
°
8
°
All Dimensions in mm
A
C
B
E
J
L
TOP VIEW
M
B
C
H
G
D
K
E
E
B
C
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
40
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
12
V
Collector Current - Continuous
I
C
500
mA
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 2) @ T
A
= 25
°C P
D
300 mW
Thermal Resistance, Junction to Ambient (Note 2)@ T
A
= 25
°C
R
θJA
417
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
V
(BR)CBO
40
⎯
V
I
C
= 100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
40
⎯
V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
12
⎯
V
I
E
= 10
μA, I
C
= 0
Collector Cutoff Current
I
CBO
⎯
50
nA
V
CB
= 30V, I
E
= 0
Collector Cutoff Current
I
CEO
⎯
1.0
μA
V
CE
= 25V, I
B
= 0
Emitter Cutoff Current
I
EBO
⎯
50
nA
V
EB
= 10V, I
C
= 0
ON CHARACTERISTICS (Note 3)
DC Current Gain
h
FE
10,000
20,000
14,000
100,000
200,000
140,000
⎯
I
C
= 10mA, V
CE
= 5.0V
I
C
= 100mA, V
CE
= 5.0V
I
C
= 500mA, V
CE
= 5.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
1.2
1.5
V
I
C
= 50mA, I
B
= 0.5mA
I
C
= 500mA, I
B
= 0.5mA
Base-Emitter Saturation Voltage
V
BE(SAT)
⎯
2.0
V
I
C
= 500mA, I
B
= 0.5mA
Base-Emitter On Voltage
V
BE(ON)
⎯
1.75
V
I
C
= 50mA, V
CE
=5.0V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
8.0 Typical
pF
V
CB
= 10V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
15 Typical
pF
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Notes: 1. No purposefully added lead. Halogen and Antimony Free.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
DS30048 Rev. 9 - 2
1 of 3
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MMBT6427
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