Diodes ZXTP5401FL - Manual (Page 3)

ZXTP5401FL
Document Number: DS33724 Rev. 2 - 2
3 of 6
www.diodes.com
June 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP5401FL
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
-160 -270 - V I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 8) BV
CEO
-150 -240 - V I
C
= -1mA
Emitter-Base Breakdown Voltage BV
EBO
-5 -8.1 - V I
E
= -100µA
Collector Cutoff Current I
CBO
-
< -1
-
-50
-50 nA
µA V CB = -120V
V
CB
= -120V, T
amb
= 100°C
Static Forward Current Transfer Ratio (Note 8) h
FE
50
60
50 135
135
130 -
240
-
-
I
C
= -1mA, V
CE
= -5V
I
C
= -10mA, V
CE
= -5V
I
C
= -50mA, V
CE
= -5V
Collector-Emitter Saturation Voltage (Note 8) V
CE(sat)
-
- -50
-70 -200
-500
mV
I
C
= - 10mA, I
B
= -1mA
I
C
= - 50mA, I
B
= -5mA
Base-Emitter Saturation Voltage (Note 8) V
BE(sat)
-
-700
-750 -1000
-1000
mV
I
C
= -10mA, I
B
= -1mA
I
C
= -50mA, I
B
= -5mA
Output Capacitance C obo
- - 10 pF V CB = -10V, f = 1MHz
Transition Frequency f
T
- 100 - MHz
V
CE
= -10V, I
C
= -10mA,
f = 100MHz
Delay Time t (d)
- 386 - ns
V
CC
= -50V, I
C
= -100mA,
I B1 = I B2 = -10mA
Rise Time t
(r)
- 202 - ns
Storage Time t
(s)
- 1720 - ns
Fall Time t
(f)
- 275 - ns
Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%