Diodes ZXTP5401G - Manual (Page 4)

ZXTP5401G
Issue 1 - August 2007 4 www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage BV
CBO
-160 -270 V I
C
= -100
␮A,
Collector-emitter breakdown
voltage (base open) BV
CEO
-150 -240 V I
C
= -1mA *
Emitter-base breakdown
voltage BV
EBO
-5 -8.1 V I
E
= -10
␮A
Collector cut-off current I
CBO
<-1 -50 nA V
CB
= -120V
-50 ␮A V
CB
= -120V, T
amb
= 100°C
Collector-emitter saturation
voltage V
CE(sat)
-50 -200 mV I
C
= -10mA, I
B
= -1mA *
-70 -500 mV I
C
= -50mA, I
B
= -5mA *
Base-emitter saturation
voltage V
BE(sat)
-700 -1000 mV I
C
= -10mA, I
B
= -1mA *
-750 -1000 mV I
C
= -50mA, I
B
= -5mA *
Static forward current transfer
ratio h
FE
50 135 I
C
= -1mA, V
CE
= -5V *
60 135 240 I
C
= -10mA, V
CE
= -5V *
50 130 I
C
= -50mA, V
CE
= -5V *
Transition frequency f
T
100 MHz I
C
= -10mA, V
CE
= -10V
f = 100MHz
Output capacitance C
OBO
6 pF V
CB
= -10V, f = 1MHz *
Delay time t
(d)
386 ns V
CC
= -50V. I
C
= -100mA,
I
B1
= I
B2
= -10mA.
Rise time t
(r)
202 ns
Storage time t
(s)
1720 ns
Fall time t
(f)
275 ns