Diodes ZXTP25140BFH - Manual (Page 4)

ZXTP25140BFH
Issue 1 - March 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
AMB
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base
breakdown voltage BV
CBO
-180 -205 V I
C
= -100
␮A
Collector-emitter
breakdown voltage
(forward blocking) BV
CEX,
-180 -205 V I
C
= -100
␮A,
R
BE
Յ 1k⍀ or
-0.25V < V
BE
< 1V
Collector-emitter
breakdown voltage (base
open) BV
CEO
-140 -160 V
I
C
= -10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ
300
␮
s; duty cycle
Յ
2%.
Emitter-collector
breakdown voltage
(reverse blocking) BV
ECO
-7 -8.5 V
I
E
= -100uA
(*)
Emitter-base breakdown
voltage BV
EBO
-7 -8.2 V I
E
= -100 ␮A
Collector cut-off current I
CBO
<-1 -50
-20 nA
␮A
V
CB
= -144V
V
CB
= -144V, T
AMB
= 100°C
Collector emitter cut-off
current I
CEX
- -100 nA V
CE
= -144V;
R
BE
Յ 1k⍀ or
-0.25V < V
BE
< 1V
Emitter cut-off current I
EBO
<-1 -50 nA V
EB
= -5.6V
Collector-emitter
saturation voltage V
ce(sat)
-40 -50 mV
I
C
= -0.1A, I
B
= -10mA
(*)
-110 -135 mV
I
C
= -0.1A, I
B
= -2mA
(*)
-90 -110 mV
I
C
= -0.5A, I
B
= -50mA
(*)
-170 -230 mV
I
C
= -0.5A, I
B
= -25mA
(*)
-180 -260 mV
I
C
= -1A, I
B
= -100mA
(*)
Base-emitter saturation
voltage V
be(sat)
-850 -950 mV
I
C
= -1A, I
B
= -100mA
(*)
Base-emitter turn-on
voltage V
BE(ON)
-800 -900 mV
I
C
= -1A, V
CE
= -2V
(*)
Static forward current
transfer ratio h
FE
100 200 300
I
C
= -10mA, V
CE
= -2V
(*)
100 190
I
C
= -0.1A, V
CE
= -2V
(*)
20 30
I
C
= -1A, V
CE
= -2V
(*)
Transition frequency f
T
75 MHz I
C
= -10mA, V
CE
= -20V
f = 20MHz
Output capacitance C
OBO
10 pF
V
CB
= -20V, f = 1MHz
(*)
Turn-on time t
(on)
102 ns V
CC
= -20V. I
C
= -100mA,
I
B1
= I
B2
= -10mA
Turn-off time t
(off)
854 ns