Diodes ZXTP23140BFH - Manual (Page 4)

ZXTP23140BFH
Issue 1 - February 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
ELECTRICAL CHARACTERISTICS (at T
AMB
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage V
(BR)CBO
-160 -180 V I
C
=-100 ␮A
Collector-emitter breakdown
voltage V
(BR)CEX
-160 -180 V I
C
=-100
␮A,
R
BE
Յ 1k⍀ OR
-0.25V < V
BE
< 1V
Collector-emitter breakdown
voltage V
(BR)CEO
-140 -160 V
I
C
=-10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width=300
␮
S. Duty cycle
Յ
2%.
Emitter-base breakdown voltage V
(BR)EBO
-7.0 -8.2 V I
E
=-100 ␮A
Collector-emitter cut-off current I
CEX
- -100 nA V
CE
=-130V;
R
BE
Յ 1k⍀ OR
-0.25V < V
BE
< 1V
Collector-base cut-off current I
CBO
<1 -20 nA V
CB
=-130V
Emitter-base cut-off current I
EBO
<1 -10 nA V
EB
=-6V
Static forward current transfer
ratio H
FE
100 200
I
C
= -10mA, V
CE
=-5V
(*)
100 180 300
I
C
=-1A, V
CE
=-5V
(*)
40 100 Ic=-2.5A, V
CE
=-5V
Collector-emitter saturation
voltage V
CE(sat)
-45 -55 mV
I
C
=-100mA, I
B
=-5mA
(*)
-80 -95 mV
I
C
=-1A, I
B
=-100mA
(*)
-190 -280 mV
I
C
=-2.5A, I
B
=-250mA
(*)
Base-emitter saturation voltage V
BE(sat)
-0.89 -1.00 V
I
C
=-2.5A, I
B
=-250mA
(*)
Base-emitter turn-on voltage V
BE(on)
-0.78 -0.90 V
I
C
=-2.5A, V
CE
=-5V
(*)
Transition frequency f
T
130 MHz Ic=-100mA, V
CE
=-10V,
f=50MHz
Output capacitance C
obo
30.9 pF V
CB
=-10V, f=1MHz
Turn–on time t
(on)
132.4 ns V
CC
=-10V, I
C
=-2A,
I
B1
=I
B2
=-200mA
Turn-off time t
(off)
345.5 ns