Absolute maximum ratings, Thermal characteristics, Esd ratings – Diodes MMST5551 User Manual
Page 2: Electrical characteristics, Mmst5551
MMST5551
Document number: DS30173 Rev. 9 - 2
2 of 4
May 2014
© Diodes Incorporated
MMST5551
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
180
V
Collector-Emitter Voltage
V
CEO
160
V
Emitter-Base Voltage
V
EBO
6.0
V
Continuous Collector Current
I
C
200
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value Unit
Power Dissipation
(Note 6)
P
D
200 mW
Thermal Resistance, Junction to Ambient
(Note 6)
R
θJA
625
°C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
ESD Ratings
(Note 7)
Characteristic Symbol
Value
Unit JEDEC
Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Collector-Base Breakdown Voltage
V
CBO
180 — V
I
C
= 100µA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
CEO
160
—
V
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
EBO
6.0
—
V
I
E
= 10µA, I
C
= 0
Collector Cutoff Current
I
CBO
—
50
nA
µA
V
CB
= 120V, I
E
= 0
V
CB
= 120V, I
E
= 0, T
A
= +100°C
Emitter Cutoff Current
I
EBO
—
50
nA
V
EB
= 4.0V, I
C
= 0
ON CHARACTERISTICS (Note 8)
DC Current Gain
h
FE
80
80
30
—
250
—
—
I
C
= 1.0mA , V
CE
= 5.0V
I
C
= 10mA, V
CE
= 5.0V
I
C
= 50mA, V
CE
= 5.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
—
0.15
0.20
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage
V
BE(SAT)
—
1.0
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
—
6.0
pF
V
CB
= -10V, f = 1.0MHz, I
E
= 0
Small Signal Current Gain
h
fe
50
250
—
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
f
T
100
300
MHz
V
CE
= 10V, I
C
= 10mA,
f = 100MHz
Noise Figure
NF
—
8.0
dB
V
CE
= 5.0V, I
C
= 200µA,
R
S
=1.0Ω, f = 1.0kHz
Notes:
6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.