Diodes MMDT5551 - Manual (Page 2)

Electrical Characteristics
@T
A
= 25°C unless otherwise specified
DS30172 Rev. 8 - 2 2 of 4
www.diodes.com
MMDT5551
© Diodes Incorporated
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
V
(BR)CBO
180 ⎯ V I
C
= 100 μA, I
E
= 0
Collector-Emitter Breakdown Voltage V
(BR)CEO
160 ⎯ V I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage V
(BR)EBO
6.0 ⎯ V I
E
= 10 μA, I
C
= 0
Collector Cutoff Current I
CBO
⎯ 50
nA
μA V
CB
= 120V, I
E
= 0
V
CB
= 120V, I
E
= 0, T
A
= 100 °C
Emitter Cutoff Current I
EBO
⎯ 50 nA V
EB
= 4.0V, I
C
= 0
ON CHARACTERISTICS (Note 6)
DC Current Gain h
FE
80
80
30 ⎯
250
⎯
⎯
I
C
= 1.0mA, V
CE
= 5.0V
I
C
= 10mA, V
CE
= 5.0V
I
C
= 50mA, V
CE
= 5.0V
Collector-Emitter Saturation Voltage V
CE(SAT)
⎯
0.15
0.20
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage V
BE(SAT)
⎯ 1.0 V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯ 6.0 pF V
CB
= 10V, f = 1.0MHz, I
E
= 0
Small Signal Current Gain h
fe
50 250 ⎯ V
CE
= 10V, I
C
= 1.0mA, f = 1.0kHz
Current Gain-Bandwidth Product f
T
100 300 MHz V
CE
= 10V, I
C
= 10mA, f = 100MHz
Noise Figure NF ⎯ 8.0 dB
V
CE
= 5.0V, I
C
= 200 μA,
R
S
= 1.0k Ω, f = 1.0kHz
Notes: 6. Short duration pulse test used to minimize self-heating effect.
0.04
0.05
0.06
0.07
0.08
0.09
0.15
0.14
0.13
0.12
0.11
0.10
1 10 100 1,000
V,
C
O
LL
E
C
T
O
R
T
O
EM
IT
T
E
R
S
A
TU
R
A
TI
O
N
VO
LT
AG
E
(
V
)
CE
(S
A
T
)
I , COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current
C
I
I
C
B
= 10
T = 150°C
A
T = 25°C
A
T = -50°C
A
0
50
25 50 75 100 125 150 175 200
P
, P
O
WE
R
D
ISSI
P
A
T
IO
N (
m
W
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs.
Ambient Temperature
A
100
150
200
0