Diodes MMBTA42 User Manual
Mmbta42, Features, Mechanical data
MMBTA42
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
•
Epitaxial Planar Die Construction
•
Complementary PNP Type Available (MMBTA92)
•
Ideal for Low Power Amplification and Switching
•
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 4 and 5)
•
Qualified to AEC-Q101 Standards for High
Reliability
Mechanical Data
•
Case: SOT-23
•
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020C
•
Terminal Connections: See Diagram
•
Terminals: Solderable per MIL-STD-202, Method 208
•
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
•
Marking (See Page 2): K3M
•
Ordering & Date Code Information: See Page 2
•
Weight: 0.008 grams (approximate)
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
α
0
°
8
°
All Dimensions in mm
A
E
J
L
TOP VIEW
M
B
C
C
B
H
G
D
K
E
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
300
V
Collector-Emitter Voltage
V
CEO
300
V
Emitter-Base Voltage
V
EBO
6.0
V
Collector Current (Note 1) (Note 3)
I
C
500
mA
Power Dissipation (Note 1)
P
d
300
mW
Thermal Resistance, Junction to Ambient (Note 1)
R
θJA
417
°C/W
Operating and Storage and Temperature Range
T
j
, T
STG
-55 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
V
(BR)CBO
300
⎯
V
I
C
= 100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
300
⎯
V
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
6.0
⎯
V
I
E
= 100
μA, I
C
= 0
Collector Cutoff Current
I
CBO
⎯
100
nA
V
CB
= 200V, I
E
= 0
Collector Cutoff Current
I
EBO
⎯
100
nA
V
CE
= 6.0V, I
C
= 0
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
25
40
40
⎯
⎯
I
C
= 1.0mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V
I
C
= 30mA, V
CE
= 10V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
0.5
V
I
C
= 20mA, I
B
= 2.0mA
Base- Emitter Saturation Voltage
V
BE(SAT)
⎯
0.9
V
I
C
= 20mA, I
B
= 2.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
cb
⎯
3.0
pF
V
CB
= 20V, f = 1.0MHz, I
E
= 0
Current Gain-Bandwidth Product
f
T
50
⎯
MHz
V
CE
= 20V, I
C
= 10mA,
f = 100MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance rating (R
θJA
), power
dissipation rating (P
d
) and power derating curve (figure 1).
4. No purposefully added lead. Halogen and Antimony Free.
5. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
DS30062 Rev. 11 - 2
1 of 3
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MMBTA42
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