Diodes ZXTP2027F - Manual (Page 4)

ZXTP2027F
Issue 3 - May 2007 4 www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage V
(BR)CBO
-100 -120 V I
C
=-100
μA
Collector-emitter breakdown
voltage V
(BR)CEV
-100 -120 V I
C
=
−1μA, 1V> V
BE
>-0.3V
Collector-emitter breakdown
voltage V
(BR)CEO
-60 -75 V
I
C
=-10mA
(a)
NOTES:
(a) Measured under pulsed conditions. Pulse width=300 ␮S. Duty cycle Յ2%.
Emitter-base breakdown
voltage V
(BR)EBO
-7.0 -8.2 V I
E
=-100
μA
Collector-emitter cut-off
current I
CEV
-20 nA V
CE
=-80V,
V
BE
= 1V
Collector-base cut-off current I
CBO
-20 nA V
CB
=-80V
Emitter-base cut-off current I
EBO
-10 nA V
EB
=-6V
Static forward current transfer
ratio H
FE
100
100
80
20
250
200
145
40
300
I
C
=-10mA, V
CE
=-2V
(a)
I
C
=-2A, V
CE
=-2V
(a)
Ic=-4A, V
CE
=-2V
(a)
Ic=-10A, V
CE
=-2V
(a)
Collector-emitter saturation
voltage V
CE(SAT)
-15
-45
-70
-155
-25
-60
-95
-240
mV
mV
mV
mV
I
C
=-100mA, I
B
=-10mA
(a)
I
C
=-1A, I
B
=-100mA
(a)
I
C
=-2A, I
B
=-200mA
(a)
I
C
=-4A, I
B
=-200mA
(a)
Base-Emitter saturation
voltage V
BE(SAT)
-0.89 -1.0 V
I
C
=-4A, I
B
=-200mA
(a)
Base-Emitter turn-on voltage V
BE(on)
-0.81 -0.95 V
I
C
=-4A, V
CE
=-2V
(a)
Transition frequency f
T
165 MHz Ic=-100mA, V
CE
=-10V,
f=50MHz
Output capacitance C
obo
44 pF V
CB
=-10V, f=1MHz
Delay timetime t
(d)
12.6 ns V
CC
=-10V, I
C
=-2A,
I
B1
=I
B2
=-200mA
Rise time t
(r)
10.2 ns
Storage time t
(stg)
220 ns
Fall time t
(f)
21 ns