Diodes ZXTP2013Z - Manual (Page 4)

ZXTP2013Z
ISSUE 1 - JUNE 2005
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage BV
CBO
-140 -160 V I
C
= -100 ␮A
Collector-emitter breakdown voltage BV
CER
-140 -160 V I
C
= -1 ␮A, RB Յ 1k⍀
Collector-emitter breakdown voltage BV
CEO
-100 -115 V I
C
= -10mA*
Emitter-base breakdown voltage BV
EBO
-7 -8.1 V I
E
= -100 ␮A
Collector cut-off current I
CBO
Ͻ1 -20
-0.5
nA
␮A
V
CB
= -100V
V
CB
= -100V, T
amb
=100 ЊC
Collector cut-off current I
CER
R Յ1k⍀
Ͻ1 -20
-0.5
nA
␮A
V
CB
= -100V
V
CB
= -100V, T
amb
=100 ЊC
Emitter cut-off current I
EBO
Ͻ1 -10 nA V
EB
= -6V
Collector-emitter saturation voltage V
CE(SAT)
-20
-65
-110
-230
-30
-85
-135
-300
mV
mV
mV
mV
I
C
= -0.1A, I
B
= -10mA*
I
C
= -1A, I
B
= -100mA*
I
C
= -2A, I
B
= -200mA*
I
C
= -4A, I
B
= -400mA*
Base-emitter saturation voltage V
BE(SAT)
-970 -1060 mV I
C
= -4A, I
B
= -400mA*
Base-emitter turn on voltage V
BE(ON)
-910 -1030 mV I
C
= -4A, V
CE
= -1V*
Static forward current transfer ratio h
FE
100
100
25
15
250
200
50
30
5
300
I
C
= -10mA, V
CE
= -1V*
I
C
= -1A, V
CE
= -1V*
I
C
= -3A, V
CE
= -1V*
I
C
= -4A, V
CE
= -1V*
I
C
= -10A, V
CE
= -1V*
Transition frequency f
T
125 MHz I
C
= 100mA, V
CE
= 10V
f=50MHz
Output capacitance C
OBO
42 pF V
CB
= -10V, f= 1MHz*
Switching times t
ON
t
OFF
42
540
ns I
C
= 1A, V
CC
= 10V,
I
B1
= I
B2
= 100mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
* Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ 2%.