Diodes ZXTP19060CG - Manual (Page 4)

ZXTP19060CG
Issue 1- February 2008 4 www.zetex.com
© Zetex Semiconductors plc 2008
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-Base breakdown
voltage BV
CBO
-60 -110 V I
C
= -100
µ
A
Collector-Emitter
breakdown voltage BV
CEO
-260 -90 V I
C
= -10mA (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
Emitter-Collector
breakdown voltage
(reverse blocking) BV
ECX
-7 -8.4 V I
E
= -100
µ
A, R
BC
< 1k
Ω
or
0.25V > V
BC
> -0.25V
Emitter-Collector
breakdown voltage
(reverse blocking) BV
ECO
-7 -8.8 V I
E
= -100
µ
A
Emitter-Base breakdown
voltage BV
EBO
-7 -8.4 V I
E
= -100
µ
A
Collector-Base cut-off
current I
CBO
<1 -50
-0.5
nA
µ
A
V
CB
= -60V
V
CB
= -60V, T
amb
=100°C
Emitter cut-off current I
EBO
<1 -50 nA V
EB
= -5.6V
Collector-Emitter
saturation voltage V
CE(sat)
-62
-145
-500
-105
-145
-300
-80
-205
-750
-165
-200
-500
mV
mV
mV
mV
mV
mV I
C
= -1A, I
B
= -100mA (*)
I
C
= -1A, I
B
= -20mA (*)
I
C
= -2A, I
B
= -40mA (*)
I
C
= -2A, I
B
= -200mA (*)
I
C
= -3A, I
B
= -300mA (*)
I
C
= -5A, I
B
= -500mA (*)
Base-Emitter saturation
voltage V
BE(sat)
-975 -1050 mV I
C
= -5A, I
B
= -500mA (*)
Base-Emitter turn-on
voltage V
BE(on)
-890 -1000 mV I
C
= -5A, V
CE
= -2V (*)
Static forward current
transfer ratio h
FE
200
160
20
330
260
40
500 I
C
= -100mA, V
CE
= -2V (*)
I
C
= -1A, V
CE
= -2V (*)
I
C
= -5A, V
CE
= -2V (*)
Transition frequency f
T
180 MHz I
C
= -50mA, V
CE
= -10V
f = 50MHz
Input capacitance C
ibo
280 400 pF V
EB
= -0.5V, f = 1MHz (*)
Output capacitance C
obo
29.5 40 pF V
CB
= -10V, f = 1MHz (*)
Delay time t
d
24.3 ns
I
C
= -500mA, V
CC
= -10V,
I
B1
= -I
B2
= -50mA
Rise time t
r
13.2 ns
Storage time t
s
456 ns
Fall time t
f
68.2 ns