Diodes ZXTP19060CFF - Manual (Page 4)

ZXTP19060CFF
Issue 2 - October 2007 4 www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage BV
CBO
-60 -110 V I
C
= -100
␮A
Collector-emitter breakdown
voltage (base open) BV
CEO
-60 -90 V I
C
= -10mA (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Emitter-base breakdown
voltage BV
EBO
-7 -8.4 V I
E
= -100
␮A
Emitter-collector breakdown
voltage (reverse blocking) BV
ECX
-7 -8.4 V I
E
= -100
␮A, R
BC
< 1k
⍀ or
0.25V > V
BC
> -0.25V
Emitter-collector breakdown
voltage (base open) BV
ECO
-7 -8.8 V I
E
= -100 ␮A,
Collector-base cut-off current I
CBO
<-1 -50 nA V
CB
= -60V
-0.5
␮A
V
CB
= -60V, T
amb
= 100°C
Emitter-base cut-off current I
EBO
<-1 -50 nA V
EB
= -5.6V
Collector-emitter saturation
voltage V
CE(sat)
-60 -75 mV I
C
= -1A, I
B
= -100mA (*)
-140 -200 mV I
C
= -1A, I
B
= -20mA (*)
-180 -270 mV I
C
= -4A, I
B
= -400mA (*)
Base-emitter saturation
voltage V
BE(sat)
-935 -1050 mV I
C
= -4A, I
B
= -400mA (*)
Base-emitter turn-on voltage V
BE(on)
-835 -950 mV I
C
= -4A, V
CE
= -2V (*)
Static forward current transfer
ratio h
FE
200 350 500 I
C
= -100mA, V
CE
= -2V (*)
160 280 I
C
= -1A, V
CE
= -2V (*)
30 50 I
C
= -4A, V
CE
= -2V (*)
Transition frequency f
T
180 MHz I
C
= -50mA, V
CE
= -10V
f = 50MHz
Output capacitance C
obo
29.5 40 pF V
CB
= -10V, f = 1MHz (*)
Delay time t
d
24.3 ns V
CC
= -10V.
I
C
= -500mA,
I
B1
= -50mA, I
B2
= -50mA.
Rise time t
r
13.2 ns
Storage time t
s
456 ns
Fall time t
f
68.2 ns