Diodes MMSTA56 - Manual (Page 2)

Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
MMSTA55
MMSTA56
V
(BR)CBO
-60
-80
⎯ V I
C
= -100 μA, I
E
= 0
Collector-Emitter Breakdown Voltage MMSTA55
MMSTA56
V
(BR)CEO
-60
-80
⎯ V I
C
= -1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage V
(BR)EBO
-4.0 ⎯ V I
E
= -100
μA, I
C
= 0
Collector Cutoff Current MMSTA55
MMSTA56
I
CBO
⎯ -100 nA
V
CB
= -60V, I
E
= 0
V
CB
= -80V, I
E
= 0
Collector Cutoff Current MMSTA55
MMSTA56
I
CEX
⎯ -100 nA
V
CE
= -60V, I
BO
= 0V
V
CE
= -80V, I
BO
= 0V
ON CHARACTERISTICS (Note 5)
DC Current Gain h
FE
100 ⎯ ⎯
I
C
= -10mA, V
CE
= -1.0V
I
C
= -100mA, V
CE
= -1.0V
Collector-Emitter Saturation Voltage V
CE(SAT)
⎯ -0.25 V I
C
= -100mA, I
B
= -10mA
Base-Emitter Saturation Voltage V
BE(SAT)
⎯ -1.2 V I
C
= -100mA, V
CE
= -1.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product f
T
50 ⎯ MHz
V
CE
= -1.0V, I
C
= -100mA,
f = 100MHz
Notes: 5. Short duration pulse test used to minimize self-heating effect.
0
50
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
DIS
S
IP
A
T
IO
N (
m
W
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs. Ambient Temperature
A
100
150
200
0
0
0.05
0.10
0.15
0.20
0.25
1 10 100 1,000
V,
C
O
LL
E
C
T
O
R
T
O
EM
IT
T
E
R
SA
TURA
TI
O
N
VO
L
T
AG
E
(V)
CE
(S
A
T
)
I , COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current
C
I
I
C
B
= 10
T = -50°C
A
T = 25°C
A
T = 150°C
A
10
1,000
100
1 10 1,000 100
h,
D
C
C
U
R
R
EN
T
G
AI
N
FE
I , COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs. Collector Current
C
T = -50°C
A
T = 25°C
A
T = 150°C
A
V = 5V
CE
1 0.1
0.1
10 100
V
, B
ASE
EM
IT
T
E
R
V
O
L
T
A
G
E (
V
)
BE
(ON
)
I , COLLECTOR CURRENT (mA)
Fig. 4 Base Emitter Voltage vs. Collector Current
C
0.2
0.3
0.4
0.6
0.5
0.8
0.7
0.9
1.0
V = 5V
CE
T = 25°C
A
T = -50°C
A
T = 150°C
A
DS30167 Rev. 10 - 2 2 of 3
www.diodes.com
MMSTA55/MMSTA56
© Diodes Incorporated