Diodes MMSTA06 - Manual

MMSTA05/MMSTA06
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
•
Epitaxial Planar Die Construction
• Complementary PNP Type Available
(MMSTA55/MMSTA56)
• Ideal for Medium Power Amplification and Switching
• Ultra-Small Surface Mount Package
•
Lead Free/RoHS Compliant (Note 2)
•
"Green" Device (Notes 3 and 4)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding
Compound, Note 4. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
•
Terminal Connections: See Diagram
•
Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
•
MMSTA05 Marking K1H, K1G (See Page 3)
•
MMSTA06 Marking K1G (See Page 3)
• Order & Date Code Information: See Page 3
• Weight: 0.006 grams (approximate)
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
α
0
°
8
°
All Dimensions in mm
A
M
J
L E D
B C
H
K
G
B E
C
E B
C
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol MMSTA05 MMSTA06 Unit
Collector-Base Voltage V
CBO
60 80 V
Collector-Emitter Voltage V
CEO
60 80 V
Emitter-Base Voltage V
EBO
4.0 V
Collector Current - Continuous (Note 1) I
C
500 mA
Power Dissipation (Note 1) P d
200 mW
Thermal Resistance, Junction to Ambient (Note 1) R θJA 625 °C/W
Operating and Storage Temperature Range T j , T STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
MMSTA05
MMSTA06
V
(BR)CBO
60
80
⎯ V I
C
= 100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage MMSTA05
MMSTA06
V (BR)CEO
60
80
⎯ V I C = 1.0mA, I B = 0
Emitter-Base Breakdown Voltage V
(BR)EBO
4.0 ⎯ V I
E
= 100 μA, I
C
= 0
Collector Cutoff Current MMSTA05
MMSTA06
I
CBO
⎯ 100 nA
V
CB
= 60V, I
E
= 0
V CB = 80V, I E = 0
Collector Cutoff Current MMSTA05
MMSTA06
I
CES
⎯ 100 nA
V
CE
= 60V, I
BO
= 0V
V
CE
= 80V, I
BO
= 0V
ON CHARACTERISTICS (Note 5)
DC Current Gain h
FE
100 ⎯ ⎯
I
C
= 10mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
Collector-Emitter Saturation Voltage V
CE(SAT)
⎯ 0.25 V I
C
= 100mA, I
B
= 10mA
Base-Emitter Saturation Voltage V BE(SAT)
⎯ 1.2 V I C = 100mA, V CE = 1.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
100 ⎯ MHz V
CE
= 2.0V, I
C
= 10mA, f = 100MHz
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. Short duration pulse test used to minimize self-heating effect.
DS30168 Rev. 9 - 2 1 of 3
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MMSTA05/MMSTA06
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