Diodes MMST2907A - Manual (Page 2)

Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage V (BR)CBO
-60 ⎯ V I C = -10
μA, I
E = 0
Collector-Emitter Breakdown Voltage V (BR)CEO
-60 ⎯ V I C = -10mA, I B = 0
Emitter-Base Breakdown Voltage V
(BR)EBO
-5.0 ⎯ V I
E
= -10
μA, I
C
= 0
Collector Cutoff Current I
CBO
⎯ -10
nA
μA V
CB
= -50V, I
E
= 0
V
CB
= -50V, I
E
= 0, T
A
= 125
°C
Collector Cutoff Current I
CEX
⎯ -50 nA V
CE
= -30V, V
EB(OFF)
= -0.5V
Base Cutoff Current I
BL
⎯ -50 nA V
CE
= -30V, V
EB(OFF)
= -0.5V
ON CHARACTERISTICS (Note 5)
DC Current Gain h
FE
75
100
100
100
50
⎯
⎯
⎯
300
⎯
⎯
I
C
= -100µA, V
CE
= -10V
I
C
= -1.0mA, V
CE
= -10V
I
C
= -10mA, V
CE
= -10V
I
C
= -150mA, V
CE
= -10V
I
C
= -500mA, V
CE
= -10V
Collector-Emitter Saturation Voltage V
CE(SAT)
⎯
-0.4
-1.6
V
I
C
= -150mA, I
B
= -15mA
I C = -500mA, I B = -50mA
Base-Emitter Saturation Voltage V
BE(SAT)
⎯
-1.3
-2.6
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance C
obo
⎯ 8.0 pF V
CB
= -10V, f = 1.0MHz, I
E
= 0
Input Capacitance C
ibo
— 30 pF V
EB
= -2.0V, f = 1.0MHz, I
C
= 0
Current Gain-Bandwidth Product f T
200 ⎯ MHz
V
CE
= -20V, I
C
= -50mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Turn-On Time t
on
⎯ 45 ns
Delay Time t
d
⎯
10 ns
Rise Time t
r
⎯ 40 ns
V
CC
= -30V, I
C
= -150mA,
I B1 = -15mA
Turn-Off Time t
off
⎯ 100 ns
Storage Time t s
⎯ 80 ns
Fall Time t
f
⎯ 30 ns
V
CC
= -6.0V, I
C
= -150mA,
I
B1
= I
B2
= -15mA
Notes: 5. Short duration pulse test used to minimize self-heating effect.
0
50
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
D
ISSI
P
A
T
IO
N (
m
W
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
A
100
150
200
0
Note 1
C
A
P
A
C
IT
AN
C
E (
p
F
)
V , REVERSE VOLTAGE (V)
Fig. 2 Typical Capacitance Characteristics
R
C
obo
C
ibo
f = 1MHz
DS30081 Rev. 9 - 2 2 of 4
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MMST2907A
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