Diodes MMDT2907V - Manual (Page 2)

DS30564 Rev. 4 - 2 2 of 4 MMDT2907V
www.diodes.com
Electrical Characteristics @ T
A
= 25 °C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage V (BR)CBO -60 ¾ V I
C
= -10 mA, I
E
= 0
Collector-Emitter Breakdown Voltage V
(BR)CEO -60 ¾ V I
C
= -10mA, I
B
= 0
Emitter-Base Breakdown Voltage V
(BR)EBO -5.0 ¾ V I
E
= -10 mA, I
C
= 0
Collector Cutoff Current I CBO
¾ -10
nA
mA
V
CB
= -50V, I
E
= 0
V
CB
= -50V, I
E
= 0, T
A
= 125 °C
Collector Cutoff Current I
CEX
¾ -50 nA V
CE
= -30V, V
EB(OFF)
= -0.5V
Base Cutoff Current I
BL
¾ -50 nA V CE = -30V, V EB(OFF) = -0.5V
ON CHARACTERISTICS (Note 4)
DC Current Gain h FE
75
100
100
100
50
¾
¾
¾
300
¾
¾
I
C
= -100µA, V
CE
= -10V
I C = -1.0mA, V CE = -10V
I
C
= -10mA, V
CE
= -10V
I C = -150mA, V CE = -10V
I
C
= -500mA, V
CE
= -10V
Collector-Emitter Saturation Voltage V
CE(SAT)
¾ -0.4
-1.6
V
I C = -150mA, I B = -15mA
I
C
= -500mA, I
B
= -50mA
Base-Emitter Saturation Voltage V
BE(SAT)
¾ -1.3
-2.6
V
I C = 150mA, I B = 15mA
I
C
= 500mA, I
B
= 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance C
obo
¾ 8.0 pF V CB = -10V, f = 1.0MHz, I E = 0
Input Capacitance C ibo — 30 pF V
EB
= -2.0V, f = 1.0MHz, I
C
= 0
Current Gain-Bandwidth Product f T 200 ¾ MHz
V CE = -20V, I C = -50mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Turn-On Time t
off
¾ 45 ns
Delay Time t
d
¾ 10 ns V CC = -30V, I C = -150mA,
I
B1
= -15mA
Rise Time t
r
¾ 40 ns
Turn-Off Time t
off
¾ 100 ns
NEW
P
RODUCT
Notes: 4. Short duration test pulse used to minimize self-heating effect.