Diodes MMBT2907AT - Manual (Page 2)

Electrical Characteristics
@T
A
= 25°C unless otherwise specified
DS30269 Rev. 8 - 2 2 of 4
www.diodes.com
MMBT2907AT
© Diodes Incorporated
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
V
(BR)CBO
-60 ⎯ V I
C
= -10 μA, I
E
= 0
Collector-Emitter Breakdown Voltage V
(BR)CEO
-60 ⎯ V I
C
= -10mA, I
B
= 0
Emitter-Base Breakdown Voltage V
(BR)EBO
-5.0 ⎯ V I
E
= -10 μA, I
C
= 0
Collector Cutoff Current I
CBO
⎯ -10
nA
μA V
CB
= -50V, I
E
= 0
V
CB
= -50V, I
E
= 0, T
A
= 125 °C
Collector Cutoff Current I
CEX
⎯ -50 nA V
CE
= -30V, V
EB(OFF)
= -0.5V
Base Cutoff Current I
BL
⎯ -50 nA V
CE
= -30V, V
EB(OFF)
= -0.5V
ON CHARACTERISTICS (Note 5)
DC Current Gain h
FE
75
100
100
100
50
⎯
⎯
⎯
300
⎯
⎯
I
C
= -100µA, V
CE
= -10V
I
C
= -1.0mA, V
CE
= -10V
I
C
= -10mA, V
CE
= -10V
I
C
= -150mA, V
CE
= -10V
I
C
= -500mA, V
CE
= -10V
Collector-Emitter Saturation Voltage V
CE(SAT)
⎯
-0.4
-1.6
V
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
Base-Emitter Saturation Voltage V
BE(SAT)
⎯
-1.3
-2.6
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯ 8.0 pF V
CB
= -10V, f = 1.0MHz, I
E
= 0
Input Capacitance C
ibo
— 30 pF V
EB
= -2.0V, f = 1.0MHz, I
C
= 0
Current Gain-Bandwidth Product f
T
200 ⎯ MHz V CE
= -20V, I
C
= -50mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Turn-On Time
t
off
⎯ 45 ns
Delay Time t
d
⎯ 10 ns
Rise Time t
r
⎯ 40 ns
V
CC
= -30V, I
C
= -150mA,
I
B1
= -15mA
Turn-Off Time t
off
⎯ 100 ns
Storage Time t
s
⎯ 80 ns
Fall Time t
f
⎯ 30 ns
V
CC
= -6.0V, I
C
= -150mA,
I
B1
= I
B2
= -15mA
Notes: 5. Short duration pulse test used to minimize self-heating effect.
0 40 80 120 160 200
T , AMBIENT TEMPERATURE (ºC)
Fig. 1, Power Derating Curve, Total Package
A
P
,
P
O
WE
R
DIS
S
IP
A
T
IO
N
(m
W
)
d
0
50
100
150
200
Note 1
C
, C
A
P
A
C
IT
AN
C
E (
pF
)
T
V , REVERSE VOLTAGE (V)
Fig. 2, Typical Capacitance Characteristics
R
Cobo
Cibo
f = 1MHz