Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTP25040DFH User Manual
Page 4
ZXTP25040DFH
© Zetex Semiconductors plc 2008
Electrical characteristics (at T
AMB
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown
voltage
BV
CBO
-45
-75
V
I
C
= -100
A
Collector-emitter breakdown
voltage (base open)
BV
CEO
-40
-65
V
I
C
= -10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ
300
s; duty cycle
Յ
2%.
Emitter-collector breakdown
voltage (reverse blocking)
BV
ECO
-3
-8.7
V
I
E
= -100uA
Emitter-base breakdown
voltage
BV
EBO
-7
-8.2
V
I
E
= -100
A
Collector cut-off current
I
CBO
<-1
-50
-0.5
nA
A
V
CB
= -45V
V
CB
= -45V, T
amb
= 100°C
Emitter cut-off current
I
EBO
<-1
-50
nA
V
EB
= -5.6V
Collector-emitter saturation
voltage
V
CE(sat)
-170
-260
mV
I
C
= -1A, I
B
= -20mA
(*)
-65
-85
mV
I
C
= -1A, I
B
= -100mA
(*)
-165
-220
mV
I
C
= -3A, I
B
= -300mA
(*)
Base-emitter saturation
voltage
V
BE(sat)
-930
-1000
mV
I
C
= -3A, I
B
= -300mA
(*)
Base-emitter turn-on voltage V
BE(on)
-830
-900
mV
I
C
= -3A, V
CE
= -2V
(*)
Static forward current
transfer ratio
h
FE
300
450
900
I
C
= -10mA, V
CE
= -2V
(*)
200
300
I
C
= -1A, V
CE
= -2V
(*)
30
60
I
C
= -3A, V
CE
= -2V
(*)
Transition frequency
f
T
270
MHz
I
C
= -50mA, V
CE
= -10V
f
= 100MHz
Output capacitance
C
OBO
17.4
pF
V
CB
= -10V, f
= 1MHz
(*)
Turn-on time
t
(on)
75.5
ns
V
CC
= -15V. I
C
= -750mA,
I
B1
= I
B2
= -15mA.
Turn-off time
t
(off)
320
ns