Diodes ZXTP2025F - Manual (Page 4)

ZXTP2025F
Issue 3 - January 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage V
(BR)CBO
-50 100 V I
C
=-100 µA
Collector-emitter breakdown
voltage V
(BR)CEO
-50 70 V
I
C
=-10mA
(a)
NOTES:
(a) Measured under pulsed conditions. Pulse width=300 ␮S. Duty cycle Յ2%.
Emitter-base breakdown
voltage V
(BR)EBO
-7.0 8.5 V I
E
=-100 µA
Collector-emitter cut-off
current I
CEV
-20 nA V
CE
=-40V,
V
BE
= 1V
Collector-base cut-off current I
CBO
-20 nA V
CB
=-40V
Emitter-base cut-off current I
EBO
-10 nA V
EB
=-6V
Static forward current transfer
ratio H
FE
180
200
70
12
380
350
120
30
560
I
C
=-10mA, V
CE
=-2V
(a)
I
C
=-500mA, V
CE
=-2V
(a)
Ic=-5A, V
CE
=-2V
(a)
Ic=-10A, V
CE
=-2V
(a)
Collector-emitter saturation
voltage V
CE(sat)
-11
-40
-150
-150
-20
-60
-230
-200
mV
mV
mV
mV
I
C
=-100mA, I
B
=-10mA
(a)
I
C
=-1A, I
B
=-100mA
(a)
I
C
=-2A, I
B
=-40mA
(a)
I
C
=-5A, I
B
=-500mA
(a)
Base-emitter saturation
voltage V
BE(sat)
-0.81
-0.95
-0.88
-1.05
V
V
I
C
=-2A, I
B
=-40mA
(a)
I
C
=-5A, I
B
=-500mA
(a)
Base-emitter turn-on voltage V
BE(on)
-0.82 -0.92 V
I
C
=-5A, V
CE
=-2V
(a)
Transition frequency f
T
190 MHz Ic=-500mA, V
CE
=-10V,
f=50MHz
Output capacitance C
obo
42 pF V
CB
=-10V, f=1MHz
Delay time t
(d)
14 ns
Rise time t
(r)
23 ns V
CC
=-12V, I
C
=-2.5A,
Storage time t
(stg)
240 ns I
B1
=I
B2
=-125mA
Fall time t
(f)
30 ns