Mmdt4413 – Diodes MMDT4413 User Manual
Page 3
MMDT4413
Document number: DS30121 Rev. 11 - 2
3 of 8
August 2013
© Diodes Incorporated
MMDT4413
Electrical Characteristics, NPN 4401 Section
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
BV
CBO
60
V
I
C
= 100µA, I
E
= 0
Collector-Emitter Breakdown Voltage
BV
CEO
40
V
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
6.0
V
I
E
= 100 µA, I
C
= 0
Collector Cutoff Current
I
CEX
100
nA
V
CE
= 35V, V
EB(OFF)
= 0.4V
Base Cutoff Current
I
BL
100
nA
V
CE
= 35V, V
EB(OFF)
= 0.4V
ON CHARACTERISTICS (Note 6)
DC Current Gain
h
FE
20
40
80
100
40
300
I
C
= 100µA, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 150mA, V
CE
= 1.0V
I
C
= 500mA, V
CE
= 2.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
0.40
0.75
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
Base-Emitter Saturation Voltage
V
BE(SAT)
0.75
0.95
1.2
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
cb
6.5
pF
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
eb
30
pF
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Input Impedance
h
ie
1.0
15
k
V
CE
= 10V, I
C
= 1.0mA, f = 1.0kHz
Voltage Feedback Ratio
h
re
0.1
8.0
x 10
-4
Small Signal Current Gain
h
fe
40
500
Output Admittance
h
oe
1.0
30
µS
Current Gain-Bandwidth Product
f
T
250
MHz
V
CE
= 10V, I
C
= 20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
15
ns
V
CC
= 30V, I
C
= 150mA,
V
BE(off)
= 2.0V, I
B1
= 15mA
Rise Time
t
r
20
ns
Storage Time
t
s
225
ns
V
CC
= 30V, I
C
= 150mA,
I
B1
= I
B2
= 15mA
Fall Time
t
f
30
ns
Note:
6. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%