Diodes MMBTH24 User Manual
Mmbth24, Features, Mechanical data
MMBTH24
NPN SURFACE MOUNT VHF/UHF TRANSISTOR
Features
•
Designed for VHF/UHF Amplifier Applications and High
Output VHF Oscillators
•
High Current Gain Bandwidth Product
•
Ideal for Mixer and RF Amplifier Applications with
collector currents in the 100
μA - 30 mA Range
•
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
Mechanical Data
•
Case: SOT-23
•
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020C
•
Terminals: Solderable per MIL-STD-202, Method 208
•
Terminal Connections: See Diagram
•
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
•
Marking Information: See Page 3
•
Ordering Information: See Page 3
•
Weight: 0.008 grams (approximate)
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
α
0
°
8
°
All Dimensions in mm
C
B
E
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
40
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
4.0
V
Collector Current - Continuous (Note 1)
I
C
50
mA
Power Dissipation (Note 1)
P
d
300
mW
Thermal Resistance, Junction to Ambient (Note 1)
R
θJA
417
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage
V
(BR)CEO
40
⎯
V
I
C
= 1mA, I
B
= 0
Collector-Base Breakdown Voltage
V
(BR)CBO
40
⎯
V
I
C
= 100
μA, I
E
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
4.0
⎯
V
I
E
= 10
μA, I
C
= 0
Collector Cutoff Current
I
CBO
⎯
100
nA
V
CB
= 30V, I
E
= 0
Emitter Cutoff Current
I
EBO
⎯
100
nA
V
EB
= 2V, I
C
= 0
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
30
⎯
⎯
I
C
= 8mA, V
CE
= 10.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
0.5
V
I
C
= 4mA, I
B
= 400
μA
Base-Emitter On Voltage
V
BE(SAT)
⎯
0.95
V
I
C
= 4mA, V
CE
= 10.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
400
⎯
MHz
V
CE
= 10V, f = 100MHz, I
C
= 8mA
Collector-Base Capacitance
C
CB
⎯
0.7
pF
V
CB
= 10V, f = 1.0MHz, I
E
= 0
Collector-Base Feedback Capacitance
C
RB
⎯
0.65
pF
V
CB
= 10V, f = 1.0MHz, I
E
= 0
Collector-Base Time Constant
Rb’Cc
⎯
9
ps
I
C
= 4mA, V
CB
= 10V, f = 31.8MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout, as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
DS31034 Rev. 13 - 2
1 of 3
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MMBTH24
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