Mmdt3946 – Diodes MMDT3946 User Manual
Page 3
MMDT3946
Electrical Characteristics, PNP 3906 Section
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
MMDT3946
Document number: DS30123 Rev. 11 - 2
3 of 6
October 2008
© Diodes Incorporated
Collector-Base Breakdown Voltage
V
(BR)CBO
-40
⎯
V
I
C
= -10
μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-40
⎯
V
I
C
= -1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5.0
⎯
V
I
E
= -10
μA, I
C
= 0
Collector Cutoff Current
I
CEX
⎯
-50
nA
V
CE
= -30V, V
EB(OFF)
= -3.0V
Base Cutoff Current
I
BL
⎯
-50
nA
V
CE
= -30V, V
EB(OFF)
= -3.0V
ON CHARACTERISTICS (Note 6)
DC Current Gain
h
FE
60
80
100
60
30
⎯
⎯
300
⎯
⎯
⎯
I
C
= -100µA, V
CE
= -1.0V
I
C
= -1.0mA, V
CE
= -1.0V
I
C
= -10mA, V
CE
= -1.0V
I
C
= -50mA, V
CE
= -1.0V
I
C
= -100mA, V
CE
= -1.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
-0.25
-0.40
V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage
V
BE(SAT)
-0.65
⎯
-0.85
-0.95
V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
4.5
pF
V
CB
= -5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
⎯
10
pF
V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
Input Impedance
h
ie
2.0
12
k
Ω
Voltage Feedback Ratio
h
re
0.1
10
x 10
-4
Small Signal Current Gain
h
fe
100
400
⎯
Output Admittance
h
oe
3.0
60
μS
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
f
T
250
⎯
MHz
V
CE
= -20V, I
C
= -10mA,
f = 100MHz
Noise Figure
NF
⎯
4.0
dB
V
CE
= -5.0V, I
C
= -100
μA,
R
S
= 1.0k
Ω,
f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
⎯
35
ns
Rise Time
t
r
⎯
35
ns
V
CC
= -3.0V, I
C
= -10mA,
V
BE(off)
= 0.5V, I
B1
= -1.0mA
Storage Time
t
s
⎯
225
ns
Fall Time
t
f
⎯
75
ns
V
CC
= -3.0V, I
C
= -10mA,
I
B1
= I
B2
= -1.0mA
1
10
1,000
100
0.1
1
10
1,000
100
h,
D
C
C
U
R
R
E
N
T
G
AI
N
FE
I , COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs.
Collector Current (NPN-3904)
C
0
50
100
25
50
75
100
125
150
175
200
P
,
P
O
WE
R
D
ISSI
P
A
T
IO
N
(mW
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs.
Ambient Temperature (Total Device, Note 1)
A
150
200
250
300
350
0
R
C/W
θJA
°
= 625