Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes MMDT3904 User Manual
Page 2: Mmdt3904
MMDT3904
Document number: DS30088 Rev. 15 - 2
2 of 5
April 2013
© Diodes Incorporated
MMDT3904
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Unit
Collector-Base Voltage
V
CBO
60 V
Collector-Emitter Voltage
V
CEO
40 V
Emitter-Base Voltage
V
EBO
6.0 V
Continuous Collector Current
I
C
200 mA
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power Dissipation (Note 5)
P
D
200 mW
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
625
C/W
Operating and Storage and Temperature Range
T
J
, T
STG
-55 to +150
C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
60
V
I
C
= 100µA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 6)
BV
CEO
40
V
I
C
= 10.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
6.0
V
I
E
= 100µA, I
C
= 0
Collector-Base Cutoff Current
I
CBO
50 nA
V
CB
= 50V
Collector-Emitter Cutoff Current
I
CEV
50
nA
V
CE
= 40V, V
BE(OFF)
= 3.0V
50
V
CE
= 40V, V
BE(ON)
= 0.25V
Emitter-Base Cutoff Current
I
EBO
50 nA
V
EB
= 5V
ON CHARACTERISTICS (Note 6)
DC Current Gain
h
FE
40
70
100
60
30
300
I
C
= 100µA, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 50mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
Collector-Emitter Saturation Voltage
V
CE(sat)
0.20
0.30
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage
V
BE(sat)
0.65
0.85
0.95
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
4.0 pF
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
8.0 pF
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Input Impedance
h
ie
1.0 10 k
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio
h
re
0.5 8.0 x
10
-4
Small Signal Current Gain
h
fe
100 400
Output Admittance
h
oe
1.0 40 µS
Current Gain-Bandwidth Product
f
T
300
MHz
V
CE
= 20V, I
C
= 10mA,
f = 100MHz
Noise Figure
NF
5.0 dB
V
CE
= 5.0V, I
C
= 100
A,
R
S
= 1.0k
f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
35 ns
V
CC
= 3.0V, I
C
= 10mA,
V
BE(off)
= - 0.5V, I
B1
= 1.0mA
Rise Time
t
r
35 ns
Storage Time
t
s
200 ns
V
CC
= 3.0V, I
C
= 10mA,
I
B1
= I
B2
= 1.0mA
Fall Time
t
f
50 ns
Notes:
5. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device
is measured when operating in a steady-state condition.
6. Short duration pulse test used to minimize self-heating effect.