Electrical characteristics, Mmbt4403 – Diodes MMBT4403 User Manual
Page 3
MMBT4403
Document Number: DS30058 Rev. 11 - 2
3 of 6
March 2012
© Diodes Incorporated
MMBT4403
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 8)
Collector-Base Breakdown Voltage
BV
CBO
-40
⎯
V
I
C
= -100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage
BV
CEO
-40
⎯
V
I
C
= -10.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
-6.0
⎯
V
I
E
= -100
μA, I
C
= 0
Collector Cutoff Current
I
CEX
⎯
-100 nA
V
CE
= -35V, V
EB(OFF)
= -0.4V
Base Cutoff Current
I
BL
⎯
-100 nA
V
CE
= -35V, V
EB(OFF)
= -0.4V
ON CHARACTERISTICS (Note 8)
DC Current Gain
h
FE
30
60
100
100
20
⎯
⎯
⎯
300
⎯
⎯
I
C
= -100µA, V
CE
= -1.0V
I
C
= -1.0mA, V
CE
= -1.0V
I
C
= -10mA, V
CE
= -1.0V
I
C
= -150mA, V
CE
= -2.0V
I
C
= -500mA, V
CE
= -2.0V
Collector-Emitter Saturation Voltage
V
CE(sat)
⎯
-0.40
-0.75
V
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
Base-Emitter Saturation Voltage
V
BE(sat)
-0.75
⎯
-0.95
-1.30
V
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
8.5 pF
V
CB
= -10V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
⎯
30 pF
V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
Input Impedance
h
ie
1.5 15 k
Ω
V
CE
= -10V, I
C
= -1.0mA,
f = 1.0kHz
Voltage Feedback Ratio
h
re
0.1 8.0
x
10
-4
Small Signal Current Gain
h
fe
60 500
⎯
Output Admittance
h
oe
1.0 100
μS
Current Gain-Bandwidth Product
f
T
200
⎯
MHz
V
CE
= -10V, I
C
= -20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
⎯
15 ns
V
CC
= -30V, I
C
= -150mA,
V
BE(off)
= -2.0V, I
B1
= -15mA
Rise Time
t
r
⎯
20 ns
Storage Time
t
s
⎯
225 ns
V
CC
= -30V, I
C
= -150mA,
I
B1
= I
B2
= -15mA
Fall Time
t
f
⎯
30 ns
Notes:
8. Short duration pulse test used to minimize self-heating effect.