Electrical characteristics, Mmbt4401 – Diodes MMBT4401 User Manual
Page 4
MMBT4401
Document Number: DS30039 Rev. 17 - 2
4 of 7
November 2013
© Diodes Incorporated
MMBT4401
Electrical Characteristics
(@T
A
= +25°C unless otherwise specified)
Characteristic Symbol
Min
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
60
V
I
C
= 100μA, I
E
= 0
Collector-Emitter Breakdown Voltage(Note 10)
BV
CEO
40
V
I
C
= 10.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
6.0
V
I
E
= 100μA, I
C
= 0
Collector Cutoff Current
I
CEX
100 nA
V
CE
= 35V, V
EB(OFF)
= 0.4V
Base Cutoff Current
I
BL
100 nA
V
CE
= 35V, V
EB(OFF)
= 0.4V
ON CHARACTERISTICS (Note 10)
DC Current Gain
h
FE
20
40
80
100
40
300
I
C
= 100µA, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 150mA, V
CE
= 1.0V
I
C
= 500mA, V
CE
= 2.0V
Collector-Emitter Saturation Voltage
V
CE(sat)
0.40
0.75
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
Base-Emitter Saturation Voltage
V
BE(sat)
0.75
0.95
1.2
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
cb
6.5 pF
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
eb
30 pF
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Input Impedance
h
ie
1.0 15 kΩ
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio
h
re
0.1 8.0 x
10
-4
Small Signal Current Gain
h
fe
40 500
Output Admittance
h
oe
1.0 30 μS
Current Gain-Bandwidth Product
f
T
250
MHz
V
CE
= 10V, I
C
= 20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
15 ns
V
CC
= 30V, I
C
= 150mA,
V
BE(off)
= 2.0V, I
B1
= 15mA
Rise Time
t
r
20 ns
Storage Time
t
s
225 ns
V
CC
= 30V, I
C
= 150mA,
I
B1
= -I
B2
= 15mA
Fall Time
t
f
30 ns
Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.