Diodes MMBT3906 - Manual (Page 4)

MMBT3906
Document number: DS30059 Rev. 17 - 2
4 of 7
www.diodes.com
November 2013
© Diodes Incorporated
MMBT3906
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
-40  V I
C
= -100μA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 10) BV
CEO
-40  V I
C
= -10mA, I
B
= 0
Emitter-Base Breakdown Voltage BV
EBO
-6.0  V I
E
= -100μA, I
C
= 0
Collector Cutoff Current I
CEV
 -50 nA V
CE
= -30V, V
BE
= -3.0V
 -50 nA V
CE
= -30V, V
BE
= 0.25V
Emitter-Base Cutoff Current I
EBO
 -50 nA V
EB
= -5V
ON CHARACTERISTICS (Note 10)
DC Current Gain h
FE
60
80
100
60
30


300



I
C
= -100µA, V
CE
= -1.0V
I
C
= -1.0mA, V
CE
= -1.0V
I
C
= -10mA, V
CE
= -1.0V
I
C
= -50mA, V
CE
= -1.0V
I
C
= -100mA, V
CE
= -1.0V
Collector-Emitter Saturation Voltage V
CE(sat)

-0.25
-0.40
V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage V
BE(sat)
-0.65

-0.85
-0.95
V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
 4.5 pF V
CB
= -5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance C
ibo
 10 pF V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
Input Impedance h
ie
2.0 12 kΩ
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio h
re
0.1 10 x 10 -4
Small Signal Current Gain h
fe
100 400 
Output Admittance h
oe
3.0 60 μS
Current Gain-Bandwidth Product f
T
250  MHz
V
CE
= -20V, I
C
= -10mA,
f = 100MHz
Noise Figure NF  4.0 dB
V
CE
= -5.0V, I
C
= -100μA,
R
S
= 1.0kΩ  f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
 35 ns V
CC
= -3.0V, I
C
= -10mA,
V
BE(off)
= 0.5V, I
B1
= -1.0mA Rise Time t
r
 35 ns
Storage Time t
s
 225 ns V
CC
= -3.0V, I
C
= -10mA,
I
B1
= I
B2
= -1.0mA Fall Time t
f
 75 ns
Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.