Electrical characteristics – Diodes MMBT2222ALP4 User Manual
Page 4
MMBT2222ALP4
Document number: DS35506 Rev. 3 - 2
4 of 7
August 2012
© Diodes Incorporated
MMBT2222ALP4
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
75
⎯
⎯
V
I
C
= 100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 6)
BV
CEO
40
⎯
⎯
V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
6
⎯
⎯
V
I
E
= 100
μA, I
C
= 0
Collector Cutoff Current
I
CEX
⎯
10 nA
V
CE
= 60V, V
EB(off)
= 3V
Collector Cutoff Current
I
CBO
⎯
⎯
10 nA
V
CB
= 60V, I
E
= 0
⎯
⎯
10
μA
V
CB
= 60V, I
E
= 0, T
A
= +125°C
Emitter Cutoff Current
I
EBO
⎯
⎯
10 nA
V
EB
= 5V, I
C
= 0
Base Cutoff Current
I
BL
⎯
⎯
20 nA
V
CE
= 60V, V
EB(off)
= 3V
ON CHARACTERISTICS (Note 6)
DC Current Gain
h
FE
35
⎯
⎯
⎯
V
CE
= 10V, I
C
= 0.1mA
50
⎯
⎯
⎯
V
CE
= 10V, I
C
= 1mA
75
⎯
⎯
⎯
V
CE
= 10V, I
C
= 10mA
35
⎯
⎯
⎯
V
CE
= 10V, I
C
= 10mA, T
A
= -55°C
100
⎯
300
⎯
V
CE
= 10V, I
C
= 150mA
50
⎯
⎯
⎯
V
CE
= 1V, I
C
= 150mA
40
⎯
⎯
⎯
V
CE
= 10V, I
C
= 500mA
Collector-Emitter Saturation Voltage
V
CE(sat)
⎯
⎯
⎯
⎯
0.3
1.0
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
Base-Emitter Saturation Voltage
V
BE(sat)
0.6
⎯
1.2
V
I
C
= 150mA, I
B
= 15mA
⎯
⎯
2.0
I
C
= 500mA, I
B
= 50mA
SMALL SIGNAL CHARACTERISTICS (Note 6)
Output Capacitance
C
obo
⎯
⎯
8 pF
V
CB
= 10V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
25 pF
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Current Gain-Bandwidth Product
f
T
300
⎯
⎯
MHz
V
CE
= 20V, I
C
= 20mA, f = 100MHz
Noise Figure
NF
⎯
⎯
4.0 dB
V
CE
= 10V, I
C
= 100µA, R
S
= 1.0k
Ω,
f = 1.0kHz
Input Impedance
h
ie
0.25
⎯
1.25 k
Ω
I
C
= 10mA, V
CE
= 10V, f = 1.0kHz
Voltage Feedback Ratio
h
re
⎯
⎯
4.0 X
10
−4
Small-Signal Current Gain
h
fe
75
⎯
375
⎯
Output Admittance
h
oe
25
⎯
200 µS
SWICHING CHARACTERISTICS (Note 6)
Delay Time
t
d
⎯
⎯
10
nS
V
CC
= 30V, V
BE(off)
= -0.5V,
I
C
= 150mA, I
B1
= 15mA
Rise Time
t
r
⎯
⎯
25
Storage Time
t
s
⎯
⎯
225
V
CC
= 30V, I
C
= 150mA,
I
B1
= I
B2
=15mA
Fall Time
t
f
⎯
⎯
60
Notes:
6. Measured under pulsed conditions. Pulse width
≤ 300μs. Duty cycle ≤2%.