Diodes ZXTP25020DZ - Manual (Page 5)

ZXTP25020DZ
Issue 1- December 2007 5 www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-Base breakdown
voltage BV
CBO
-25 -55 V I
C
= -100
μA
Collector-Emitter
breakdown voltage BV
CEO
-20 -45 V I
C
= -10mA (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
≤ 300µs; duty cycle ≤ 2%.
Emitter-Collector
breakdown voltage
(reverse blocking) BV
ECX
-4 -8.5 V I
E
= -100
μA, R
BC
< 1k
Ω or
0.25V > V
BC
> -0.25V
Emitter-Collector
breakdown voltage
(reverse blocking) BV
ECO
-4 -8.5 V I
E
= -100
μA
Emitter-Base breakdown
voltage BV
EBO
-7 -8.3 V I
E
= -5.6V
Collector-Base cut-off
current I
CBO
<1 -50
-0.5
nA
μA V
CB
= -25V
V
CB
= -25V, T
amb
=100°C
Emitter cut-off current I
EBO
<1 -50 nA V
EB
= -5.6V
Collector-Emitter
saturation voltage V
CE(sat)
-50
-150
-185
-195
-65
-215
-245
-265
mV
mV
mV
mV
I
C
= -1A, I
B
= -100mA (*)
I
C
= -1A, I
B
= -10mA (*)
I
C
= -2A, I
B
= -40mA (*)
I
C
= -5A, I
B
= -500mA (*)
Base-Emitter saturation
voltage V
BE(sat)
-1010 -1100 mV I
C
= -5A, I
B
= -500mA (*)
Base-Emitter turn-on
voltage V
BE(on)
-870 -1000 mV I
C
= -5A, V
CE
= -2V (*)
Static forward current
transfer ratio h
FE
300
200
45
450
310
85
20
900 I
C
= -10mA, V
CE
= -2V (*)
I
C
= -1A, V
CE
= -2V (*)
I
C
= -5A, V
CE
= -2V (*)
I
C
= -10A, V
CE
= -2V (*)
Transition frequency f
T
290 MHz I
C
= -50mA, V
CE
= -10V
f = 100MHz
Input capacitance C
ibo
157 400 pF V
EB
= -0.5V, f = 1MHz (*)
Output capacitance C
obo
21 30 pF V
CB
= -10V, f = 1MHz (*)
Delay time t
d
14.2 ns
V
CC
= -10V, I
C
= -1A,
I
B1
= -I
B2
= -50mA
Rise time t
r
16.3 ns
Storage time t
s
186 ns
Fall time t
f
32.7 ns