Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTP25020BFH User Manual
Page 4
ZXTP25020BFH
© Zetex Semiconductors plc 2008
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown
voltage
BV
CBO
-40
-60
V
I
C
= -100
A
Collector-emitter breakdown
voltage (forward blocking)
BV
CEX
-40
-60
V
I
E
= -100
A
(*)
R
BE
< 1k
⍀
or 1V < V
BE
< -0.25V
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ
300
s; duty cycle
Յ
2%.
Collector-emitter breakdown
voltage (base open)
BV
CEO
-20
-35
V
I
C
= -10mA
Emitter-base breakdown
voltage
BV
EBO
-7
-8.2
V
I
E
= -100
A
Emitter-collector breakdown
voltage (reverse blocking)
BV
ECX
-6
-8
V
I
E
= -100
A
BC
< 10k
⍀
or 0.25 < V
BC
< -0.25V
Emitter-collector breakdown
voltage (base open)
BV
ECO
-7
-8.6
V
I
E
= -100
A
Collector-base cut-off current
I
CBO
<-1
-50
nA
V
CB
= -32V
-20
A V
CB
= -32V, T
amb
= 100°C
Collector-emitter cut-off
current
I
CEX
-
100
nA
V
CE
= -32V; R
BE
< 1k
⍀
or 1V < V
BE
< -0.25V
Emitter-base cut-off current
I
EBO
<-1
-50
nA
V
EB
= -5.6V
Collector-emitter saturation
voltage
V
CE(sat)
-44
-60
mV
I
C
= -1A, I
B
= -100mA
-80
-110
mV
I
C
= -1A, I
B
= -20mA
-125
-190
mV
I
C
= -2A, I
B
= -40mA
-160
-210
mV
I
C
= -4A, I
B
= -200mA
-160
-210
mV
I
C
= -5A, I
B
= -500mA
Base-emitter saturation
voltage
V
BE(sat)
-930
-1000
mV
I
C
= -4A, I
B
= -200mA
Base-emitter turn-on voltage
V
BE(on)
-820
-900
mV
I
C
= -4A, V
CE
= -2V
Static forward current
transfer ratio
h
FE
100
200
300
I
C
= -10mA, V
CE
= -2V
80
160
I
C
= -1A, V
CE
= -2V
50
100
I
C
= -4A, V
CE
= -2V
45
I
C
= -10A, V
CE
= -2V
Transition frequency
f
T
250
MHz I
C
= -50mA, V
CE
= -10V
f
= 100MHz
Output capacitance
C
OBO
32.5
40
pF
V
CB
= -10V, f
= 1MHz
Delay time
t
d
53
ns
V
CC
= -15V,
I
C
= -750mA,
I
B1
= I
B2
= -15mA
Rise time
t
r
63
ns
Storage time
t
s
128
ns
Fall time
t
f
50
ns