Diodes ZXTP25012EFH - Manual (Page 4)

ZXTP25012EFH
Issue 2 - October 2007 4 www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage BV
CBO
-12 -35 V I
C
= -100
␮A
Collector-emitter breakdown
voltage (base open) BV
CEO
-12 -25 V I
C
= -10mA (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Emitter-base breakdown
voltage BV
EBO
-7 -8.5 V I
E
= -100
␮A
Collector-base cut-off
current I
CBO
<-1 -50 nA V
CB
= -12V
-0.5
␮A
V
CB
= -12V, T
amb
= 100°C
Emitter-base cut-off current I
EBO
<-1 -50 nA V
EB
= -5.6V
Collector-emitter saturation
voltage V
CE(sat)
-50 -65 mV I
C
= -1A, I
B
= -100mA (*)
-150 -260 mV I
C
= -1A, I
B
= -10mA (*)
-175 -350 mV I
C
= -2A, I
B
= -40mA (*)
-160 -210 mV I
C
= -4A, I
B
= -400mA (*)
Base-emitter saturation
voltage V
BE(sat)
-970 -1050 mV I
C
= -4A, I
B
= -400mA (*)
Base-emitter turn-on voltage V
BE(on)
-825 -950 mV I
C
= -4A, V
CE
= -2V (*)
Static forward current
transfer ratio h
FE
500 800 1500 I
C
= -10mA, V
CE
= -2V (*)
300 450 I
C
= -1A, V
CE
= -2V (*)
50 100 I
C
= -4A, V
CE
= -2V (*)
Transition frequency f
T
310 MHz I
C
= -50mA, V
CE
= -10V
f = 100MHz
Output capacitance C
obo
16.9 pF V
CB
= -10V, f = 1MHz (*)
Delay time t
d
41 ns V
CC
= -10V
I
C
= -1A,
I
B1
= I
B2
= -10mA
Rise time t
r
62 ns
Storage time t
s
179 ns
Fall time t
f
65 ns