Diodes ZXTP23015CFH - Manual (Page 4)

ZXTP23015CFH
Issue 2 - May 2007 4 www.zetex.com
© Zetex Semiconductors plc 2007
ELECTRICAL CHARACTERISTICS (at T
AMB
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage V
(BR)CBO
-15 -40 V I
C
=-100
␮A
Collector-emitter breakdown
voltage V
(BR)CES
-15 -40 V I
C
=-100 ␮A
Collector-emitter breakdown
voltage V
(BR)CEO
-15 -25 V
I
C
=-10mA
(*)
Emitter-base breakdown voltage V
(BR)EBO
-7.0 -8.2 V I
E
=-100 ␮A
Emitter-collector breakdown
voltage V
(BR)ECO
-6.0 -8.5 V I
E
=-100 ␮A
Collector-emitter cut-off current I
CES
-20 nA V
CE
=-12V
Collector-base cut-off current I
CBO
-20 nA V
CB
=-12V
Emitter-base cut-off current I
EBO
-10 nA V
EB
=-6V
Static forward current transfer
ratio H
FE
200 380
I
C
=-10mA, V
CE
=-2V
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300 ␮S. Duty cycle Յ2%.
200 350 560 I
C
=-500mA, V
CE
=-2V
140 220 Ic=-6A, V
CE
=-2V
Collector-emitter saturation
voltage V
CE(sat)
-6 -10 mV
I
C
=-100mA, I
B
=-10mA
(*)
-27 -36 mV
I
C
=-1A, I
B
=-100mA
(*)
-90 -120 mV
I
C
=-3A, I
B
=-60mA
(*)
-140 -190 mV
I
C
=-6A, I
B
=-240mA
(*)
Base-emitter saturation voltage V
BE(sat)
-0.83 -0.93 V
I
C
=-3A, I
B
=-60mA
(*)
-0.93 -1.03 V
I
C
=-6A, I
B
=-240mA
(*)
Base-emitter turn-on voltage V
BE(on)
-0.83 -0.93 V
I
C
=-6A, V
CE
=-2V
(*)
Transition frequency f
T
270 MHz Ic=-500mA, V
CE
=-2V,
f=50MHz
Output capacitance C
obo
78.4 pF V
CB
=-10V, f=1MHz
Delay time t
(d)
16 ns V
CC
=-5V, I
C
=-3A,
I
B1
=I
B2
=-150mA
Rise time t
(r)
13 ns
Storage time t
(stg)
123 ns
Fall time t
(f)
9 ns