Diodes ZXTP19020CFF - Manual (Page 4)

ZXTP19020CFF
Issue 1 - February 2007 4 www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage BV
CBO
-25 -45 V I
C
= -100
␮A
Collector-emitter breakdown
voltage (base open) BV
CEO
-20 -30 V I
C
= -10mA (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300 ␮
s; duty cycle Յ2%.
Emitter-base breakdown voltage BV
EBO
-7 -8.3 V I
E
= -100
␮A
Emitter-collector breakdown
voltage (reverse blocking) BV
ECX
-6 -8.3 V I
E
= -100 ␮A, R
BC
Յ1k⍀ or
0.25V < V
BC
< -0.25V
Emitter-collector breakdown
voltage (base open) BV
ECO
-5 -8.5 V I
E
= -100 ␮A,
Collector-base cut-off current I
CBO
<-1 -50 nA V
CB
= -20V
-20
␮A V
CB
= -20V, T
amb
= 100°C
Emitter-base cut-off current I
EBO
<-1 -50 nA V
EB
= -5.6V
Collector-emitter saturation
voltage V
CE(sat)
-30 -40 mV I
C
= -1A, I
B
= -100mA (*)
-50 -70 mV I
C
= -1A, I
B
= -20mA (*)
-75 -120 mV I
C
= -2A, I
B
= -40mA (*)
-105 -135 mV I
C
= -5A, I
B
= -500mA (*)
Base-emitter saturation voltage V
BE(sat)
-925 -1050 mV I
C
= -5A, I
B
= -500mA (*)
Base-emitter turn-on voltage V
BE(on)
-815 -950 mV I
C
= -5A, V
CE
= -2V (*)
Static forward current transfer
ratio h
FE
200 350 500 I
C
= -100mA, V
CE
= -2V (*)
170 300 I
C
= -1A, V
CE
= -2V (*)
110 180 I
C
= -5A, V
CE
= -2V (*)
Transition frequency f
T
200 MHz I
C
= -50mA, V
CE
= -10V
f = 100MHz
Output capacitance C
obo
52 70 pF V
CB
= -10V, f = 1MHz (*)
Delay time t
d
66.8 ns V
CC
= -15V.
I
C
= -750mA,
I
B1
= 15mA, I
B2
= -15mA.
Rise time t
r
74.9 ns
Storage time t
s
226 ns
Fall time t
f
85.5 ns