Diodes MMBT4126 User Manual
Mmbt4126, Features, Mechanical data
MMBT4126
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
•
Epitaxial Planar Die Construction
•
Complementary NPN Type Available (MMBT4124)
•
Ideal for Low Power Amplification and Switching
•
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2 and 4)
Mechanical Data
•
Case: SOT-23
•
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020C
•
Terminal Connections: See Diagram
•
Terminals: Solderable per MIL-STD-202, Method 208
•
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
•
Marking (See Page 3): K2B
•
Ordering & Date Code Information: See Page 3
•
Weight: 0.008 grams (approximate)
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
α
0
°
8
°
All Dimensions in mm
E
B
C
A
E
J
L
TOP VIEW
M
B
C
C
B
E
H
G
D
K
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
-25
V
Collector-Emitter Voltage
V
CEO
-25
V
Emitter-Base Voltage
V
EBO
-4.0
V
Collector Current - Continuous (Note 1)
I
C
-200
mA
Power Dissipation (Note 1)
P
D
300
mW
Thermal Resistance, Junction to Ambient (Note 1)
R
θJA
417
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
V
(BR)CBO
-25
⎯
V
I
C
= -10
μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-25
⎯
V
I
C
= -1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
-4.0
⎯
V
I
E
= -10
μA, I
C
= 0
Collector Cutoff Current
I
CBO
⎯
-50
nA
V
CB
= -20V, I
E
= 0V
Emitter Cutoff Current
I
EBO
⎯
-50
nA
V
EB
= -3.0V, I
C
= 0V
ON CHARACTERISTICS (Note 3)
DC Current Gain
h
FE
120
60
360
⎯
⎯
I
C
= -2.0mA, V
CE
= -1.0V
I
C
= -50mA, V
CE
= -1.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
-0.40
V
I
C
= -50mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage
V
BE(SAT)
⎯
-0.95
V
I
C
= -50mA, I
B
= -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
4.5
pF
V
CB
= -5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
⎯
10
pF
V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
Small Signal Current Gain
h
fe
120
480
⎯
V
CE
= 1.0V, I
C
= -2.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
f
T
250
⎯
MHz
V
CE
= -20V, I
C
= -10mA,
f = 100MHz
Noise Figure
NF
⎯
4.0
dB
V
CE
= -5.0V, I
C
= -100
μA,
R
S
= 1.0k
Ω,
f = 1.0kHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
DS30106 Rev. 8 - 2
1 of 3
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MMBT4126
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