Diodes MMBT123S User Manual
Mmbt123s, Features, Mechanical data
MMBT123S
1A NPN SURFACE MOUNT TRANSISTOR
Features
•
Epitaxial Planar Die Construction
•
Ideal for Medium Power Amplification and Switching
•
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2 and 4)
Mechanical Data
•
Case: SOT-23
•
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020D
•
Terminals: Solderable per MIL-STD-202, Method 208
•
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
•
Terminal Connections: See Diagram
•
Marking Information: See Page 3
•
Ordering Information: See Page 3
•
Weight: 0.008 grams (approximate)
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
α
0
°
8
°
All Dimensions in mm
A
DS30292 Rev. 7 - 2
1 of 3
www.diodes.com
MMBT123S
© Diodes Incorporated
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
45
V
Collector-Emitter Voltage
V
CEO
18
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current - Continuous
I
C
1
A
Power Dissipation (Note 1)
P
D
300
mW
Thermal Resistance, Junction to Ambient (Note 1)
R
θJA
417
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
V
(BR)CBO
45
⎯
V
I
C
= 100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
18
⎯
V
I
C
= 1mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
5
⎯
V
I
E
= 100
μA, I
C
= 0
Collector Cutoff Current
I
CBO
⎯
1
μA
V
CB
= 40V, I
E
= 0
Emitter Cutoff Current
I
EBO
⎯
1
μA
V
EB
= 4V, I
C
= 0
ON CHARACTERISTICS (Note 3)
DC Current Gain
h
FE
150
800
⎯
I
C
= 100mA, V
CE
= 1V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
0.5
V
I
C
= 300mA, I
B
= 30mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
8
pF
V
CB
= 10V, f = 1.0MHz, I
E
= 0
Current Gain-Bandwidth Product
f
T
100
⎯
MHz
V
CB
= 10V, I
E
= 50mA,
f = 100MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
E
B
C
E
J
L
TOP VIEW
M
B
C
H
G
D
K
C
B
E