Mmbd5004a/c/s new prod uc t, Maximum ratings, Thermal characteristics – Diodes MMBD5004A/C/S User Manual
Page 2: Electrical characteristics, Mmbd5004a/c/s
MMBD5004A/C/S
Document number: DS35585 Rev. 2 - 2
2 of 4
April 2012
© Diodes Incorporated
MMBD5004A/C/S
NEW PROD
UC
T
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Repetitive Peak Reverse Voltage
V
RRM
400 V
Working Peak Reverse Voltage
DC Blocking Voltage
V
RWM
V
R
350 V
RMS Reverse Voltage
V
R(RMS)
247 V
Forward Continuous Current (Note 5)
I
F
300 mA
Peak Repetitive Forward Current (Note 5)
I
FRM
625 mA
Non-Repetitive Peak Forward Surge Current
@ t = 1.0
μs
@ t = 1.0ms
I
FSM
5
3
A
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power Dissipation (Note 5) (See figure 1)
P
D
350 mW
Thermal Resistance Junction to Ambient Air (Note 5)
R
θJA
357
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Reverse Breakdown Voltage (Note 6)
V
(BR)R
400
⎯
⎯
V
I
R
= 150
μA
Forward Voltage
V
F
⎯
⎯
⎯
⎯
0.9
1.05
1.275
V
I
F
= 20mA
I
F
= 100mA
I
F
= 200mA
Reverse Current (Note 6)
I
R
⎯
⎯
⎯
150
5
nA
μA
V
R
= 240V
V
R
= 360V
Total Capacitance
C
T
⎯
0.65 2.0 pF
V
R
= 0V, f = 1.0MHz
Reverse Recovery Time
t
rr
⎯
⎯
50 ns
I
F
= I
R
= 30mA,
I
rr
= 3.0mA, R
L
= 100
Ω
Notes:
5. Part mounted on FR-4 board with recommended pad layout, which can be found on our websit6. Short duration pulse test used to minimize self-heating effect.
400
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve, Total Package
A
P
,
P
O
WE
R
DIS
S
IP
A
T
IO
N (
m
W
)
D
200
100
300
0
500
0
30
60
90
120
150
I
, IN
S
T
ANT
A
NEOUS
F
O
RW
ARD
C
URRENT
(
A
)
F
m
100
1
10
0.1
1,000
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics, Per Element
F
0
0.2
0.4
0.6
0.8
1.0
1.2
T = 150 C
J
°
T = 1
C
J
25
°
T =
C
J
85
°
T = 25 C
J
°
T =
5 C
J
-5
°