Mmbd4448w, Maximum ratings, Thermal characteristics – Diodes MMBD4448W User Manual
Page 2: Electrical characteristics
MMBD4448W
Document number: DS30095 Rev. 12 - 2
2 of 4
February 2011
© Diodes Incorporated
MMBD4448W
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Non-Repetitive Peak Reverse Voltage
V
RM
100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
75 V
RMS Reverse Voltage
V
R(RMS)
53 V
Forward Continuous Current (Note 4)
I
FM
500 mA
Average Rectified Output Current (Note 4)
I
O
250 mA
Non-Repetitive Peak Forward Surge Current
@ t = 1.0
μs
@ t = 1.0s
I
FSM
4.0
1.0
A
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power Dissipation (Note 4)
P
D
200 mW
Thermal Resistance Junction to Ambient Air (Note 4)
R
θJA
625
°C/W
Operating and Storage Temperature Range
T
J,
T
STG
-65 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Max
Unit
Test
Condition
Reverse Breakdown Voltage (Note 5)
V
(BR)R
75
⎯
V
I
R
= 10
μA
Forward Voltage
V
F
0.62
⎯
⎯
⎯
0.72
0.855
1.0
1.25
V
I
F
= 5.0mA
I
F
= 10mA
I
F
= 100mA
I
F
= 150mA
Reverse Current (Note 5)
I
R
⎯
1.0
50
30
25
μA
μA
μA
nA
V
R
= 75V
V
R
= 75V, T
J
= 150°C
V
R
= 25V, T
J
= 150°C
V
R
= 20V
Total Capacitance
C
T
⎯
2.0 pF
V
R
= 0, f = 1.0MHz
Reverse Recovery Time
t
rr
⎯
4.0 ns
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100
Ω
Notes:
4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at
5. Short duration pulse test used to minimize self-heating effect.
0
50
100
150
200
250
P
,
P
O
WE
R
DISS
IP
A
T
IO
N
(mW
)
D
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Power Derating Curve
A
°
0
120
80
40
160
200
10
100
1,000
1
0.1
0
1.6
1.2
0.4
0.8
I,
I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
WA
R
D
C
U
R
R
E
N
T
(m
A
)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F