Mmbd4448h, Maximum ratings, Thermal characteristics – Diodes MMBD4448H User Manual
Page 2: Electrical characteristics
MMBD4448H
Document number: DS30176 Rev. 10 - 2
2 of 4
February 2011
© Diodes Incorporated
MMBD4448H
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Non-Repetitive Peak Reverse Voltage
V
RM
100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
80 V
RMS Reverse Voltage
V
R(RMS)
57 V
Forward Continuous Current (Note 3)
I
FM
500 mA
Average Rectified Output Current (Note 3)
I
O
250 mA
Non-Repetitive Peak Forward Surge Current
@ t = 1.0
μs
@ t = 1.0s
I
FSM
4.0
1.0
A
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power Dissipation (Note 3)
P
D
350 mW
Thermal Resistance Junction to Ambient Air (Note 3)
R
θJA
357
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Max
Unit
Test
Condition
Reverse Breakdown Voltage (Note 4)
V
(BR)R
80
⎯
V
I
R
= 2.5
μA
Forward Voltage
V
F
0.62
⎯
⎯
⎯
0.72
0.855
1.0
1.25
V
I
F
= 5.0mA
I
F
= 10mA
I
F
= 100mA
I
F
= 150mA
Reverse Current (Note 4)
I
R
⎯
100
50
30
25
nA
μA
μA
nA
V
R
= 70V
V
R
= 75V, T
J
= 150
°C
V
R
= 25V, T
J
= 150
°C
V
R
= 20V
Total Capacitance
C
T
⎯
3.5 pF
V
R
= 6V, f = 1.0MHz
Reverse Recovery Time
t
rr
⎯
4.0 ns
V
R
= 6V, I
F
= 5mA
Notes:
3. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at4. Short duration pulse test used to minimize self-heating effect.
0
120
80
40
160
200
T , AMBIENT TEMPERATURE (ºC)
Fig. 1 Power Derating Curve (Note 3)
A
P
,
P
O
WE
R
DIS
S
IP
A
T
IO
N
(m
W
)
D
0
100
200
300
400
500
10
100
1,000
1
0.1
0
1.6
1.2
0.4
0.8
I,
I
N
S
T
AN
T
ANE
O
U
S
F
O
R
WA
R
D
C
U
R
R
EN
T
(m
A
)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
T = 125ºC
A
T = -40ºC
A
T = 75ºC
A
T = 25ºC
A
T = 0ºC
A