Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DT2636-04S User Manual
Page 2
DT2636-04S
Document number: DS36468 Rev. 2 – 2
2 of 5
November 2013
© Diodes Incorporated
DT2636-04S
ADVANCED INFORMATION
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified)
Characteristic Symbol Value Unit Conditions
Peak Pulse Current
I
PP
6.5
A
8/20µs, From CH to GND
Peak Pulse Current
I
PP
6.5
A
8/20µs, From GND to CH
Peak Pulse Power
P
PP
60
W
8/20µs, From CH to GND
ESD Protection – Contact Discharge
V
ESD_Contact
±18 kV
Standard
IEC
61000-4-2
ESD Protection – Air Discharge
V
ESD_Air
±20 kV
Standard
IEC
61000-4-2
Operating Temperature
T
OP
-55 to +85
°C
—
Storage Temperature
T
STG
-55 to +150
°C
—
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power Dissipation Typical (Note 5)
P
D
200 mW
Thermal Resistance, Junction to Ambient Typical (Note 5)
R
θJA
625
°C/W
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
Reverse Standoff Voltage
V
RWM
— — 5.5 V
—
Channel Leakage Current (Note 6, 7)
I
R
— 1 10 nA
V
R
= 2.5V
Reverse Breakdown Voltage
V
BR
7.0 — 9.5 V
I
R
= 1mA, from CH to GND
Clamping Voltage, Positive Transients
V
CL1
— 6.8 — V
I
PP
= 1A, t
p
= 8/20μs
Clamping Voltage, Positive Transients
V
CL1
— 9 — V
I
PP
= 5A, t
p
= 8/20μs
Clamping Voltage, Negative Transients
V
CL2
— 1.5 — V
I
PP
= 1A, t
p
= 8/20μs
Forward Voltage
V
F
— 0.7 — V
I
F
= 1mA, GND to CH
Dynamic Resistance
R
DIFF
— 0.4
—
Ω
I
PP
= 1A, t
p
= 8/20μs, CH to GND
Dynamic Resistance
R
DIFF-R
— 0.45 — Ω
TLP, 20A, tp = 100 ns, CH to GND
Dynamic Resistance
R
DIFF-F
— 0.2 — Ω
TLP, 20A, tp = 100 ns, GND to CH
CH to GND Capacitance
C
(CH-GND)
— 0.75 — pF
V
(CH-GND)
= 0V, f = 1MHz
— 0.65 0.9 pF
V
(CH-GND)
= 2.5V, f = 1MHz
Delta C
CH
C
CHMAX-
C
CHMIN
— 0.04 — pF
C
CHMAX
-
C
CHMIN
Notes:
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website
6. Short duration pulse test used to minimize self-heating effect.
7. Measured from pin 1, 2, 4 and 5 to GND.