Drtr5v0u4s new prod uc t, Maximum ratings, Thermal characteristics – Diodes DRTR5V0U4S User Manual
Page 2: Electrical characteristics

DRTR5V0U4S
Document number: DS36008 Rev. 3 - 2
2 of 4
June 2013
© Diodes Incorporated
DRTR5V0U4S
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified)
Characteristic Symbol Value
Unit
Conditions
Peak Pulse Current
I
PP
5
A
8/20µs, Per Figure 2
ESD Protection – Contact Discharge
V
ESD_Contact
±8 kV
Standard
IEC
61000-4-2
ESD Protection – Air Discharge
V
ESD_Air
±15 kV
Standard
IEC
61000-4-2
Thermal Characteristics
Characteristic Symbol
Value Unit
Power Dissipation (Note 5)
P
D
200
mW
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
625
C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
Reverse Standoff Voltage
V
RWM
—
— 5.5 V
-
Channel Leakage Current (Note 6, 7)
I
R
— 1 100
nA
V
R
= 3V
Reverse breakdown voltage
V
BR
6.0 — 9.0 V
I
R
= 1mA, from pin 5 to pin 2
Forward Voltage
V
F
—
0.8
—
V
I
F
= 8mA
Dynamic Resistance
R
DYN
—
0.9
—
Ω
I
PP
= 1A, t
p
= 8/20
μs
I/O to GND Capacitance
C
(I/O-GND)
—
1.0 1.5 pF
V
(I/O-GND)
= 0V, f = 1MHz
I/O to I/O Capacitance
C
(I/O-I/O)
—
0.6 — pF
V
(I/O-I/O)
= 0V, f = 1MHz
Notes:
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
7. Measured from pin 1, 3, 4, 5 and 6 to GND.
8. For information on the impact of Diodes' USB 2.0 compatible ESD protectors on signal integrity including eye diagram plots, please refer to AN77 at the
follow
0
125
175
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Figure 1 Power Derating Curve
A
°
P
,
P
O
WE
R
DIS
S
IP
A
T
IO
N (
m
W
)
D
25
100
50
75
150
25
75
125
200
175
Note 5
0
50
25
50
75
100
125
150
P
EAK
P
U
LS
E
D
E
R
A
T
IN
G
%
O
F
P
EAK
PO
W
E
R O
R
CUR
RENT
T , AMBIENT TEMPERATURE (°C)
Figure 2 Pulse Derating Curve
A
0
100
25
75
175 200