Drtr5v0u2sr new prod uc t, Maximum ratings, Thermal characteristics – Diodes DRTR5V0U2SR User Manual
Page 2: Electrical characteristics
DRTR5V0U2SR
Document number: DS36005 Rev. 3 - 2
2 of 4
August 2013
© Diodes Incorporated
DRTR5V0U2SR
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified)
Characteristic Symbol Value Unit Conditions
Peak Pulse Current
I
PP
5
A
8/20µs, Per Figure 3
ESD Protection – Contact Discharge
V
ESD_Contact
±8 kV
Standard
IEC
61000-4-2
ESD Protection – Air Discharge
V
ESD_Air
±15 kV
Standard
IEC
61000-4-2
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power Dissipation (Note 5)
P
D
400
mW
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
310 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
Reverse Standoff Voltage
V
RWM
— — 5.5 V
—
Channel Leakage Current (Note 6, 7)
I
R
— 1 100
nA
V
R
= 3V
Reverse breakdown voltage
V
BR
6.0 — 9.0 V
I
R
= 1mA, from pin 4 to pin 1
Forward Voltage (Note 7)
V
F
— 0.8 — V
I
F
= 8mA
Dynamic Resistance (Note 7)
R
DYN
— 0.9 —
Ω
I
PP
= 1A, t
p
= 8/20
μs
I/O to GND Capacitance (Note 7)
C
(I/O-GND)
— 1.0 1.5 pF
V
(I/O-GND)
= 0V, f = 1MHz
Notes:
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
7. Measured from pin 2 or pin 3 to GND.
8. For information on the impact of Diodes' USB 2.0 compatible ESD protectors on signal integrity including eye diagram plots, please refer to AN77 at the
follow
100
25
50
75
100
125
150
P
,
P
O
WE
R
DISS
IP
A
T
IO
N
(mW
)
D
T , AMBIENT TEMPERATURE (°C)
Figure 1 Power Dissipation vs. Ambient Temperature
A
150
200
250
400
0
50
0
300
350
Note 5
0
50
25
50
75
100
125
150
P
EAK
P
U
LS
E
D
E
R
A
T
IN
G
%
O
F
P
EAK
PO
W
E
R O
R
CUR
RENT
T , AMBIENT TEMPERATURE (°C)
Figure 2 Pulse Derating Curve
A
0
100
25
75
175 200