Diodes DESD5V0S1BLD - Manual (Page 2)

DESD5V0S1BLD
Document number: DS35650 Rev. 4 - 2
2 of 4
www.diodes.com
March 2012
© Diodes Incorporated
DESD5V0S1BLD
NEW PROD
UC
T
Maximum Ratings
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Unit Conditions
Peak Pulse Power Dissipation P
PP
130 W 8/20
μs, Per Fig. 1
Peak Pulse Current I
PP
12 A 8/20 μs, Per Fig. 1
ESD Protection – Contact Discharge V
ESD_Contact
±30 kV IEC 61000-4-2 Standard
ESD Protection – Air Discharge V
ESD_Air
±30 kV IEC 61000-4-2 Standard
Thermal Characteristics
Characteristic Symbol Value Unit
Package Power Dissipation (Note 5) P
D
250 mW
Thermal Resistance, Junction to Ambient (Note 5) R θJA 500
°C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Standoff Voltage V
RWM
- - 5 V -
Channel Leakage Current (Note 6) I
RM
- 5 100 nA V
RWM
= 5V
Clamping Voltage V
CL
-
- -
- 10
14
V
I
PP
= 1A, t
p
= 8/20 μS
I
PP
= 12A, t
p
= 8/20 μS
Breakdown Voltage V
BR
5.5 - 9.5 V I
R
= 1mA
Differential Resistance R
DIF
- 0.4 - Ω I
R
= 10A, t
p
= 8/20 μS
Channel Input Capacitance C
T
- 35 45 pF V
R
= 0V, f = 1MHz
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
0
t, TIME ( s)
Fig. 1 Pulse Waveform
μ
20 40 60
100
50
0
I
, PE
AK P
U
L
S
E
C
URRENT
(
%
I
)
Pp
p
P
20
25
30
35
0 1 2 3 4 5 6
V , REVERSE VOLTAGE (V)
Fig. 2 Typical Total Capacitance vs. Reverse Voltage
R
C
,
T
O
T
AL
C
A
P
A
C
IT
AN
C
E (
pF
)
T
f = 1 MHz