Diodes DUP45V6P5 - Manual (Page 2)

DUP45V6P5
Document number: DS36048 Rev. 3 - 2
2 of 5
www.diodes.com
February 2013
© Diodes Incorporated
DUP45V6P5
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Forward Voltage @ I
F
= 10mA V
F
0.9 V
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Notes 5) P
D
300 mW
Peak Power Dissipation, 8x20µS Waveform (Note 6) P
pk
20 W
Thermal Resistance, Junction-to-Ambient (Note 5) R
θJA
417 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Type
Number
Marking
Code
Breakdown Voltage
(Note 7)
Leakage Current
(Note 7)
Max. Clamping
Voltage
(Note 6)
Capacitance
@0V Bias(pF)
(Note 8)
Capacitance
@3V Bias(pF)
(Note 8)
V
BR
@ I
T
= 1mA I
RM
@ V
RM
V
C
@ I
PP
C
T
C
T
Min (V) Nom (V) Max (V) Max( μA) (V) V
C
(V) I
PP
(A) Typ Max Typ Max
DUP45V6P5 V2 5.3 5.6 5.9 1.0 3.0 10.5 1.0 13 17 7.0 11.5
Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. Suggested Pad Layout Document AP02001,
which can be found on our website at http://www.diodes.com.
6. Non-repetitive current pulse per Figure 3 and derate above T
A
= +25°C per Figure 3.
7. Short duration pulse test used to minimize self-heating effect.
8. Per element, f = 1MHZ, T
A
= +25 °C
0 125 175
300
50
200
0
T , AMBIENT TEMPERATURE ( C)
Figure 1 Power Derating Curve
A
°
P
,
P
O
WE
R
DI
SSI
P
A
T
IO
N (
m
W
)
D
25 100 50 75 150
250
Note 5
100
150
0 25 50 75 100 125 150 175 200
100
75
50
25
0
T , AMBIENT TEMPERATURE (°C)
Figure 2 Pulse Derating Curve
A
P
EA
K
P
U
LS
E D
E
R
A
T
IN
G
IN
%
O
F
PEA
K POW
E
R OR
CURRENT